DataVXACS Applied Materials & InterfacesPaper
journal article·2023-12-05

Proximity Effect-Induced Magnetoresistance Enhancement in a Fe3GeTe2/NbSe2/Fe3GeTe2 Magnetic Tunnel Junction

Xiangyu Zeng, Ge Ye, Fazhi Yang, Qikai Ye, Liang Zhang, Boyang Ma, Yulu Liu, Mengwei Xie, Genquan Han, Yue Hao, Jikui Luo, Xin Lu, Yan Liu, Xiaozhi Wang

ACS Applied Materials & Interfaces
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Source abstract

Abstract

The coupling between van der Waals-layered magnetic and superconducting materials holds the possibility of revealing novel physical mechanisms and realizing spintronic devices with new functionalities. Here, we report on the realization and investigation of a maximum ∼17-fold magnetoresistance (MR) enhancement based on a vertical magnetic tunnel junction of Fe 3 GeTe 2 (FGT)/NbSe 2 /FGT near the NbSe 2 layer’s superconducting critical temperature ( T C ) of 6.8 K. This enhancement is attributed to the band splitting in the atomically thin NbSe 2 spacer layer induced by the magnetic proximity effect on the material interfaces. However, the band splitting is strongly suppressed by the interlayer coupling in the thick NbSe 2 layer. Correspondingly, the device with a thick NbSe 2 layer displays no MR increase near T C but a current dependent on transport properties at extremely low temperatures. This work carefully investigates the mechanism of MR enhancement, paving an efficient way for the modulation of spintronics’ properties and the achievement of spin-based integrated circuits.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Iron-based superconductors research · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

Center for Correlated Matter and Department of Physics, Zhejiang University, Hangzhou 310027, China

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

Research Center for Humanoid Sensing and Perception, Zhejiang Lab, Hangzhou 311100, China

Funding

Zhejiang University · National Key Research and Development Program of China · Natural Science Basic Research Program of Shaanxi Province · Key Research and Development Program of Zhejiang Province · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China · Natural Science Foundation of Zhejiang Province

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