Controllability of the Conductive Filament in Porous SiO_x Memristors by Humidity-Mediated Silver Ion Migration

Oxide-based memristors composed of Ag/porous SiO x /Si stacks are fabricated using different etching time durations between 0 and 90 s, and the memristive properties are analyzed in the relative humidity (RH) range of 30–60%. The combination of humidity and porous structure provides binding sites to control silver filament formation with a confined nanoscale channel. The memristive properties of devices show high on/off ratios up to 10 8 and a dispersion coefficient of 0.1% of the high resistance state ( C HRS ) when the RH increases to 60%. Humidity-mediated silver ion migration in the porous SiO x memristors is investigated, and the mechanism leading to the synergistic effects between the porous structure and environmental humidity is elucidated. The artificial neural network constructed theoretically shows that the recognition rate increases from 60.9 to 85.29% in the RH range of 30–60%. The results and theoretical understanding provide insights into the design and optimization of oxide-based memristors in neuromorphic computing applications.