DataVXACS Applied Materials & InterfacesPaper
journal article·2020-02-26

Determining Surface Terminations and Chirality of Noncentrosymmetric FeGe Thin Films via Scanning Tunneling Microscopy

Joseph P. Corbett, Tiancong Zhu, Adam S. Ahmed, Steven J. Tjung, Jacob J. Repicky, Takahiro Takeuchi, Jonathan Guerrero-Sanchez, Noboru Takeuchi, Roland K. Kawakami, Jay A. Gupta

ACS Applied Materials & Interfaces· Volume 12· Issue 8
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Source abstract

Abstract

Scanning tunneling microscopy was used to study the surfaces of 20-100 nm thick FeGe films grown by molecular beam epitaxy. An average surface lattice constant of ∼6.8 Å, in agreement with the bulk value, was observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffraction. Each of the four possible chemical terminations in the FeGe films were identified by comparing atomic-resolution images, showing distinct contrast with simulations from density functional theory calculations. A detailed study of the atomic layering order and registry across step edges allows us to uniquely determine the grain orientation and chirality in these noncentrosymmetric films.
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Research context

OpenAlex topics: Magnetic properties of thin films · Advanced Electron Microscopy Techniques and Applications · Theoretical and Computational Physics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States

Integrated Graduate School of Medicine, Engineering, and Agricultural Science, University of Yamanashi, Kofu 400-8510 Japan

Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autónoma de México, Apartado Postal 14, Ensenada, Baja California 22800, Mexico

Funding

Defense Advanced Research Projects Agency · Direcci?n General de Asuntos del Personal Acad?mico, Universidad Nacional Aut?noma de M?xico · Consejo Nacional de Ciencia y Tecnolog?a · U.S. Department of Energy

References (36)

Show source-provided references
1. 10.1103/PhysRevLett.96.12720110.1103/PhysRevLett.96.127201 ↗
2. 10.1073/pnas.160019711310.1073/pnas.1600197113 ↗
3. 10.1103/PhysRevMaterials.2.07440410.1103/PhysRevMaterials.2.074404 ↗
4. 10.1038/nmat291610.1038/nmat2916 ↗
5. 10.1103/PhysRevLett.108.26720110.1103/PhysRevLett.108.267201 ↗
6. 10.1103/PhysRevB.77.18440210.1103/PhysRevB.77.184402 ↗
7. 10.1126/science.116676710.1126/science.1166767 ↗
8. 10.1038/nphys204510.1038/nphys2045 ↗
9. 10.1038/natrevmats.2016.4410.1038/natrevmats.2016.44 ↗
10. 10.1126/science.aaa144210.1126/science.aaa1442 ↗
11. 10.1021/acs.nanolett.5b0265310.1021/acs.nanolett.5b02653 ↗
12. 10.1103/PhysRevLett.119.04720510.1103/PhysRevLett.119.047205 ↗
13. 10.1038/nnano.2013.2910.1038/nnano.2013.29 ↗
14. 10.1038/natrevmats.2017.3110.1038/natrevmats.2017.31 ↗
15. 10.7567/JJAP.54.05300110.7567/JJAP.54.053001 ↗
16. 10.1038/srep0678410.1038/srep06784 ↗
17. 10.1021/acs.nanolett.6b0401010.1021/acs.nanolett.6b04010 ↗
18. 10.1016/j.jcrysgro.2017.03.01210.1016/j.jcrysgro.2017.03.012 ↗
19. 10.1103/PhysRevB.93.02040410.1103/PhysRevB.93.020404 ↗
20. 10.1103/PhysRevB.86.11542810.1103/PhysRevB.86.115428 ↗
21. 10.1016/j.susc.2010.10.03110.1016/j.susc.2010.10.031 ↗
22. 10.1016/j.susc.2013.08.00510.1016/j.susc.2013.08.005 ↗
23. 10.1103/PhysRevB.87.03543610.1103/PhysRevB.87.035436 ↗
24. 10.1103/PhysRevLett.110.20720110.1103/PhysRevLett.110.207201 ↗
25. 10.1063/1.243241010.1063/1.2432410 ↗
26. 10.2478/s11534-011-0096-210.2478/s11534-011-0096-2 ↗
27. 10.1107/S002188981103897010.1107/S0021889811038970 ↗
28. 10.1088/0953-8984/21/39/39550210.1088/0953-8984/21/39/395502 ↗
29. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
30. 10.1103/PhysRevB.13.518810.1103/PhysRevB.13.5188 ↗
31. 10.1103/PhysRevB.31.80510.1103/PhysRevB.31.805 ↗
32. 10.1103/PhysRevLett.102.03720410.1103/PhysRevLett.102.037204 ↗
33. 10.1038/nnano.2016.1810.1038/nnano.2016.18 ↗
34. 10.1038/nnano.2015.4110.1038/nnano.2015.41 ↗
35. 10.1103/PhysRevB.100.14443910.1103/PhysRevB.100.144439 ↗
36. Corbett, J. P.; Zhu, T.; Ahmed, A. S.; Tjung, S. J.; Repicky, J. J.; Takeuchi, T.; Kawakami, R. K.; Gupta, J. A. Surface Structures of Epitaxial B20 FeGe(–1–1–1) Thin Films via Scanning Tunneling Microscopy. arXiv:1807.00741v1 2018.