In-Operando Optical Spectroscopy of Field-Effect-Gated Al-Doped ZnO
Source abstract
Abstract
Transparent conductive oxides (TCO) have the unique characteristics of combining optical transparency with high electrical conductivity; such a property makes them uniquely alluring for applications in visible and infrared photonics. One of their most interesting features is the large sensitivity of their optical response to the doping level. We performed the active electrical manipulation of the dielectric properties of aluminum-doped ZnO (AZO), a TCO-based on Earth-abundant elements. We actively tuned the optical and electric performances of AZO films by means of an applied voltage in a parallel-plate capacitor configuration, with SrTiO 3 as the dielectric, and monitored the effect of charge injection/depletion by means of in-operando spectroscopic ellipsometry. Calculations of the optical response of the gated system allowed us to extract the spatially resolved variations in the dielectric function of the TCO and infer the injected/depleted charge profile at the interface.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
OPTMATLAB, Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146Genova, Italy
CNR-Istituto Nanoscienze, 41125Modena, Italy
CNR-SPIN, Corso F.M. Perrone 24, 16152Genova, Italy
Funding
H2020 Marie Sklodowska-Curie Actions · Compagnia di San Paolo
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