journal article·2024-10-02Open access

Humidity Sensing Properties of Different Atomic Layers of Graphene on the SiO2/Si Substrate

Qiang Gao, Hongliang Ma, Chang He, Xiaojing Wang, Jie Ding, Wendong Zhang, Xuge Fan

Abstract

Graphene has great potential to be used for humidity sensing due to its ultrahigh surface area and conductivity. However, the impact of different atomic layers of graphene on the SiO 2 /Si substrate on humidity sensing has not been studied yet. In this paper, we fabricated three types of humidity sensors on the SiO 2 /Si substrate based on one to three atomic layers of graphene, in which the sensing areas of graphene are 75 μm × 72 μm and 45 μm × 72 μm, respectively. We studied the impact of both the number of atomic layers of graphene and the sensing areas of graphene on the responsivity and response/recovery time of the prepared graphene-based humidity sensors. We found that the relative resistance change of the prepared devices decreased with the increase of number of atomic layers of graphene under the same change of relative humidity. Further, devices based on tri-layer graphene showed the fastest response/recovery time, while devices based on double-layer graphene showed the slowest response/recovery time. Finally, we chose devices based on double-layer graphene that have relatively good responsivity and stability for application in respiration monitoring and contact-free finger monitoring.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Gas Sensing Nanomaterials and Sensors · Analytical Chemistry and Sensors · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Advanced Research Institute for Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China

Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, Beijing Institute of Technology, Beijing 100081, China

School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China

Advanced Interdisciplinary Technology Research Center, National Innovation Institute of Defense Technology, 100071 Beijing, China

State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China

National Key Laboratory for Electronic Measurement Technology, School of Instrument and Electronics, North University of China, Taiyuan 030051, China

Beijing Institute of Technology, Zhuhai, Beijing Institute of Technology, Zhuhai 519088, China

Funding

National Key Research and Development Program of China · National Outstanding Youth Science Fund Project of National Natural Science Foundation of China · Beijing Institute of Technology · Natural Science Foundation of Beijing Municipality · National Natural Science Foundation of China · 173 Technical Field Fund

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