In-situ Characterization of MoS₂ Based Field Effect Transistors during Ion Irradiation

Gregor Hlawacek; Zahra Fekri; Panish Chava; Artur Erbe

doi:10.1017/s1431927620014105

journal article·2020-08Open access

In-situ Characterization of MoS₂ Based Field Effect Transistors during Ion Irradiation

Gregor Hlawacek, Zahra Fekri, Panish Chava, Artur Erbe

Microscopy and Microanalysis· Volume 26· Issue S2

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Abstract

Gregor Hlawacek, Zahra Fekri, Panish Chava, Artur Erbe; In-situ Characterization of MoS2 Based Field Effect Transistors during Ion Irradiation, Microscopy

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Source: openalex_inverted_index · Quality: short

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Electronic materials

OpenAlex topics: Semiconductor materials and devices · Ion-surface interactions and analysis · Advanced Memory and Neural Computing

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References (5)

Show source-provided references

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