First Application of a Spherical-Aberration Corrected Microscope Material Science

Abstract One of the most challenging tasks for high-resolution electron microscopy (HREM) is the atomistic investigation of defects and interfaces in thin films of semiconductors and ceramics. In particular, the application of these materials in electronic devices requires the understanding of the atomistic structure responsible for electronic and optical properties. The imaging of these structures requires a point resolution down to 0.1 nm. For example the smallest atomic spacing of GaAs in the (110) projection is 0.14 nm. According to Scherzer the point resolution of the TEM is proportional to spherical-aberration coefficient Cs1/4 and to the wave length λ3/4. Commercial medium-voltage microscopes up to 400 kV offer only a point resolution of 0.16 nm due to the high spherical-aberration constant Cs of the electromagnetic objective lens. Decreasing the wave length λ by increasing the electron energy improves the point resolution, but has the drawback of severe radiation damage and high costs.