DataVXMicroscopy and MicroanalysisPaper
journal article·2014-08Open access

Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors

C. Trager-Cowan, G. Naresh-Kumar, N. Allehiani, S. Kraeusel, B. Hourahine, S. Vespucci, D. Thomson, J. Bruckbauer, G. Kusch, P. R. Edwards, R. W. Martin, C. Mauder, A. P. Day, A. Winkelmann, A. Vilalta-Clemente, A. J. Wilkinson, P. J. Parbrook, M. J. Kappers, M. A. Moram, R. A. Oliver, C. J. Humphreys, P. Shields, E. D. Le Boulbar, D. Maneuski, V. O'Shea, K. P. Mingard

Microscopy and Microanalysis· Volume 20· Issue S3
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Abstract

C Trager-Cowan, G Naresh-Kumar, N Allehiani, S Kraeusel, B Hourahine, S Vespucci, D Thomson, J Bruckbauer, G Kusch, P R Edwards, R W Martin, C Mauder, A P
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OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques

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