Indium Sulfide and Ternary In-S-O Nanowires for Optoelectronic Applications

Indium sulfide (In₂S₃) is a promising semiconductor material for window layers in solar cell devices and other optoelectronic applications as it presents a direct band gap around 2.0 eV at room temperature, and large photosensitivity and photoconductivity. The presence of several polymorphic structures depending on the processing parameters is also of interest to tailor the required material properties for different applications. It is currently being investigated for high efficiency solar cell based on CuInS₂-In₂S₃ heterostructures, replacing CdS layers. Few studies have been reported on nanostructured In₂S₃ grown by several methods.