Direct observation of reversible oxygen migration and phase transitions in ferroelectric Hf0.5Zr0.5O2 thin-film devices
Source abstract
Abstract
Pavan Nukala, Majid Ahmadi, Sytze de Graaf, Bart J Kooi, Beatriz Noheda, Henny Zandbergen, Yingfen Wei; Direct observation of reversible oxygen migration a
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Advanced Memory and Neural Computing · Ferroelectric and Piezoelectric Materials
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References (8)
Show source-provided references
1. Dynamic observation of oxygen vacancies in hafnia layer by in situ transmission electron microscopy10.1007/s12274-015-0857-0 ↗
2. Schröder · 2019
3. Possible electrochemical origin of ferroelectricity in HfO2 thin films10.1016/j.jallcom.2019.153628 ↗
4. Ferroelectric Second-Order Memristor10.1021/acsami.9b08189 ↗
5. 3. Nukala, P. , Wei, Y. , de Haas, V. , Antoja-Lleonart, J. , Guo, Q. , Noheda, B. , Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films. arXiv:2005.01809 (2020).10.1080/00150193.2020.1791658 ↗
6. Ferroelectricity in hafnium oxide thin films10.1063/1.3634052 ↗
7. A rhombohedral ferroelectric phase in epitaxially strained Hf 0.5 Zr 0.5 O 2 thin films10.1038/s41563-018-0196-0 ↗
8. Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices10.1002/adfm.201700432 ↗