DataVXMicroscopy and MicroanalysisPaper
journal article·2016-07Open access

Characterization of Defects in III-V Semiconductor Materials (InP, GaAs and InGaAs/ InP on Si) in Nano-sized Patterns by Transmission Electron Microscopy

J.H. Lee, Y.D. Cho, I.G. Lee, C.S. Shin, W.K. Park, D.H. Kim, D.H. Ko

Microscopy and Microanalysis· Volume 22· Issue S3
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Abstract

JH Lee, YD Cho, IG Lee, CS Shin, WK Park, DH Kim, DH Ko; Characterization of Defects in III-V Semiconductor Materials (InP, GaAs and InGaAs/ InP on Si) in
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short

Research context

Electronic materials

OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques

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References (3)

Show source-provided references
1. 10.1063/1.297303710.1063/1.2973037 ↗
2. Journal of applied physics · 2013 · 46 · 035306
3. 10.1109/LED.2008.91781710.1109/LED.2008.917817 ↗