Voltage and Dopant Concentration Measurements of Semiconductors using a Band-Pass Toroidal Energy Analyzer Inside a Scanning Electron Microscope
Source abstract
Abstract
Abstract This paper presents experimental results obtained from a scanning electron microscope (SEM) second-order focusing toroidal electron energy analyzer attachment. The results demonstrate that the analyzer can be used to obtain high signal-to-noise voltage and dopant concentration measurements on semiconductors in the presence of different electric field conditions at the sample. The experimentally calculated relative error of measurement typically varies from 31 to 63, corresponding to secondary electron (SE) signal mean shifts of 9–18 mV. The millivolt accuracy of these results is over one order of magnitude better than earlier quantitative dopant concentration measurements made by a retarding field analyzer.
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Research context
OpenAlex topics: Electron and X-Ray Spectroscopy Techniques · Electronic and Structural Properties of Oxides · Surface and Thin Film Phenomena
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