Application of Lattice Strain Analysis of Semiconductor Device by Nano-beam Diffraction Using the 300 kV Cold-FE TEM
Source abstract
Abstract
Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Optical Coatings and Gratings · Anodic Oxide Films and Nanostructures
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References
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