Origin of Ferroelectricity in Thin Film HfO2 Probed by Revolving STEM and PACBED

Xiahan Sang; Everett D. Grimley; Tony Schenk; Uwe Schroeder; James M. LeBeau

doi:10.1017/s1431927615004699

journal article·2015-08Open access

Origin of Ferroelectricity in Thin Film HfO2 Probed by Revolving STEM and PACBED

Xiahan Sang, Everett D. Grimley, Tony Schenk, Uwe Schroeder, James M. LeBeau

Microscopy and Microanalysis· Volume 21· Issue S3

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Abstract

Xiahan Sang, Everett D Grimley, Tony Schenk, Uwe Schroeder, James M LeBeau; Origin of Ferroelectricity in Thin Film HfO2 Probed by Revolving STEM and PACBE

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Source: openalex_inverted_index · Quality: short

Research context

Electronic materials

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (6)

Show source-provided references

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