Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS

Joshua Taillon; Karen Gaskell; Gang Liu; Leonard Feldman; Sarit Dahr; Tsvetanka Zheleva; Aivars Lelis; Lourdes Salamanca-Riba

doi:10.1017/s1431927615008466

journal article·2015-08

Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS

Joshua Taillon, Karen Gaskell, Gang Liu, Leonard Feldman, Sarit Dahr, Tsvetanka Zheleva, Aivars Lelis, Lourdes Salamanca-Riba

Microscopy and Microanalysis· Volume 21· Issue S3

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Abstract

Joshua Taillon, Karen Gaskell, Gang Liu, Leonard Feldman, Sarit Dahr, Tsvetanka Zheleva, Aivars Lelis, Lourdes Salamanca-Riba; Characterization of the Oxid

Only a short abstract or summary was supplied by the source.

Source: openalex_inverted_index · Quality: short

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Electronic materials

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Silicon and Solar Cell Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (6)

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