Estimation of Ge nanocrystals size by Raman, X-rays, and HRTEM techniques

Ge NCs have attracted considerable attention because of their potential applications in nonvolatile memory and integrated optoelectronics. A number of groups have already proposed integrate flash memories based on Ge NCs embedded SiO₂ matrix. Since Al₂O₃ presents a high dielectric constant comparatively to SiO₂, it is a good candidate to replace silica in flash memory systems, and therefore improve their performances. Moreover, Al₂O₃ presents good mechanical properties, and supports high temperature, which leads it to be an ideal material for Si processing conditions. However, a few studies have been reported on Ge NCs embedded in Al₂O₃ matrix.