Application of Confocal Laser Imaging Microscopy and Raman Spectroscopy to Particle Characterization in Semiconductor Industry

Abstract The analytical needs in semiconductor technology have developed according to the increasing demands imposed by size and complexity. Early optical visualization, localization and counting of ever-smaller particles extended almost immediately to their morphological and chemical characterization. This evolution was due to the shifting balance from quality control to root-cause analysis. Root-cause analysis requires a deeper analytical approach to the characterization of the observed defects. Atomic composition may suffice at times as an answer. However, this information may be ambiguous and inadequate. Therefore, deeper chemical information regarding molecular structure and crystallinity of the particle is now required. The analytical capabilities and versatilities associated with optical spectroscopy inevitably have led to their increasing applications in the semiconductor industry. in particular, the complementary Infrared and Raman spectroscopies on one hand provide huge insight into the molecular structure and crystallinity of the particles, on the other hand Raman and Photoluminescence (PL) spectroscopies are easily coupled to systems providing particle visualization and localization.