DataVXMicroscopy and MicroanalysisPaper
journal article·2022-08-01

Operando Observation of Reversible Oxygen Migration and Phase Transitions in Hafnia-based Ferroelectric Devices

Pavan Nukala, Majid Ahmadi, Yingfen Wei, Sytze de Graaf, Evgenios Stylianidis, Tuhin Chakrabortty, Sylvia Matzen, Henny W Zandbergen, Alexander Björling, Dan Mannix, Dina Carbone, Bart Kooi, Beatriz Noheda

Microscopy and Microanalysis· Volume 28· Issue S1
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Source abstract

Abstract

Pavan Nukala, Majid Ahmadi, Yingfen Wei, Sytze de Graaf, Evgenios Stylianidis, Tuhin Chakrabortty, Sylvia Matzen, Henny W Zandbergen, Alexander Björling, D
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short

Research context

Electronic materials

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Indian Institute of Science Center for Nanoscience and Engineering, , Bengaluru, India

University of Groningen Zernike Institute of Advanced Materials, , Groningen, The Netherlands

Nanoelectronic Devices Laboratory, EPFL , Lausanne, Switzerland

University College London Department of Physics and Astronomy, , Gower Street, London, United Kingdom

Paris-Saclay University Center for Nanoscience and Nanotechnology, , CNRS, Palaiseau, France

Delft University of Technology Kavli Institute of Nanoscience, Faculty of Applied Sciences, , CJDelft, The Netherlands

Lund University MAX IV Laboratory, , Lund, Sweden

University Grenoble Alpes , CNRS, Institut Néel, Grenoble, France

European Spallation Source , Lund, Sweden

Aarhus University , Langelandsgade 140, Aarhus, Denmark

University of Groningen CogniGron (Groningen Cognitive Systems and Materials Center), , Nijenborgh AG Groningen, Netherlands

References (3)

Show source-provided references
1. Scale-free ferroelectricity induced by flat phonon bands in HfO2
2. Possible electrochemical origin of ferroelectricity in HfO2 thin films.
3. Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices