Characterization of Ferroelectric Random Access Memory (FRAM) Storage Capacitors
Source abstract
Abstract
Sahar Hihath, Hannah Harter, Jerry Fortier, David Flowers; Characterization of Ferroelectric Random Access Memory (FRAM) Storage Capacitors, Microscopy and
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (5)
Show source-provided references
1. Whatmore · 2017
2. [5] Yung, L. C. , RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics, Langkawi, 2013, pp. 375–378.
3. [3] Devaney, J. R. , Failure Analysis Mechanisms, Techniques, & Photo Atlas. 1983.
4. Yeh · 2016 · 6 · 035128
5. [4] Yoo, D. C. , Symp. On VLSI Tech. Dig., pp. 100–101, 2005.