High-Resolution Electron Backscatter Diffraction in III-Nitride Semiconductors

Arantxa Vilalta-Clemente; G. Naresh-Kumar; M. Nouf-Allehiani; Peter J. Parbrook; Emmanuel D.Le Boulbar; Duncan Allsopp; Philip A. Shields; Carol Trager-Cowan; Angus J. Wilkinson

doi:10.1017/s1431927615011861

journal article·2015-08Open access

High-Resolution Electron Backscatter Diffraction in III-Nitride Semiconductors

Arantxa Vilalta-Clemente, G. Naresh-Kumar, M. Nouf-Allehiani, Peter J. Parbrook, Emmanuel D.Le Boulbar, Duncan Allsopp, Philip A. Shields, Carol Trager-Cowan, Angus J. Wilkinson

Microscopy and Microanalysis· Volume 21· Issue S3

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Arantxa Vilalta-Clemente, G Naresh-Kumar, M Nouf-Allehiani, Peter J Parbrook, Emmanuel DLe Boulbar, Duncan Allsopp, Philip A Shields, Carol Trager-Cowan, A

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Electronic materials

OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices · Semiconductor materials and interfaces

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References (3)

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3. 10.1016/j.ultramic.2005.10.00110.1016/j.ultramic.2005.10.001 ↗