The Combination of STEM Tomography and STEM/EDS Analysis of NiSi Formation Related Defects in Semiconductor Wafer-foundries

B. Fu; M. Gribelyuk; L. Dumas; C. Fang; N. LaManque; L. Hodgkins; E. Chen

doi:10.1017/s1431927616002488

journal article·2016-07Open access

The Combination of STEM Tomography and STEM/EDS Analysis of NiSi Formation Related Defects in Semiconductor Wafer-foundries

B. Fu, M. Gribelyuk, L. Dumas, C. Fang, N. LaManque, L. Hodgkins, E. Chen

Microscopy and Microanalysis· Volume 22· Issue S3

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Abstract

B Fu, M Gribelyuk, L Dumas, C Fang, N LaManque, L Hodgkins, E Chen; The Combination of STEM Tomography and STEM/EDS Analysis of NiSi Formation Related Defe

Only a short abstract or summary was supplied by the source.

Source: openalex_inverted_index · Quality: short

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Electronic materials

OpenAlex topics: Electron and X-Ray Spectroscopy Techniques · Semiconductor materials and interfaces · Silicon and Solar Cell Technologies

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References (2)

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1. 10.1063/1.36541010.1063/1.365410 ↗

2. 10.1017/S143192761400353510.1017/S1431927614003535 ↗