Photovoltaic performance of an alternating cold–hot method deposited CdSe thin films

Cadmium selenide (CdSe) thin films were prepared on indium tin oxide substrate by an alternating cold–hot method, in which cadmium nitrate solution was used as a cold deposition solution, while sodium selenite and potassium borohydride mixed solution was used as a hot deposition solution. The influences of the preparation conditions such as the concentration of Cd(NO ₃ ) ₂ , the number of deposition cycle and the cycle time, on the photoelectric performance of the sample under simulated sunlight were explored. The results show that the CdSe thin film prepared under the reaction conditions of 0.06 mol/l Cd(NO ₃ ) ₂ at the tenth deposition cycle (30 s per cycle) reaches the highest photovoltage of 0.285 V. Under the simulated solar illumination, the open‐circuit voltage and short‐circuit currents are 0.419 V and 5.57 mA/cm ² , respectively. X‐ray diffraction indicates that the strongest diffraction peak at 42.215° of the (111) crystal plane is corresponding to 15.15 nm CdSe nanocrystals. Scanning electron microscopy observation shows that the thickness of the CdSe film is about 200 nm and the size of the spherical and uniformly dispersed nanocrystals is around 50 nm.