Ultrathin‐body tunnelling FET using a trench structure
Source abstract
Abstract
An ultrathin‐channel trench single gate tunnelling field‐effect transistor (trench SG‐TFET) with a 5 nm channel thickness is proposed and investigated. Trench SG‐TFETs demonstrate a higher I ON (∼8 times), a steeper sub‐threshold swing (SS) (average SS of 46.2 mV/decade and point SS of 21.8 mV/decade), and a higher I ON / I OFF current ratio (∼10 times) as compared with the conventional SG‐TFET at V DS = 0.4 V and temperature of 300 K. Also by using intrinsic region in drain, it has a strong immunity to short‐channel effects in extremely scaled trench SG‐TFETs. The proposed trench SG‐TFET seems to be attractive for future energy‐efficient circuit applications.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University 310018 Hangzhou People's Republic of China
College of Information and Communication Engineering Harbin Engineering University 150001 Harbin People's Republic of China
Funding
National Natural Science Foundation of China
References (21)
Show source-provided references
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