Graphene antidot nanoribbon tunnel field‐effect transistor

Abstract A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure. The intrinsic strain at the HJ interface is absent naturally, greatly avoiding the tunnelling blocking effect of the interface states. The energy gap ( E _g ) of the graphene antidot nanoribbon (GANR) can be flexibly modulated through the antidot morphology, resulting in highly tunable device performance. Moreover, the stability of the TFET behaviours considering the patterning technology issue is studied. Simulation results indicate that the GANR is suitable for the TFET design in different application scenarios.