Ternary semiconductor ZnSe _0.7 Te _0.3 nanowires

Ternary semiconductor ZnSe _0.7 Te _0.3 nanowires (NWs) are synthesised by using a thermal evaporation method, and the as‐synthesised NWs have a wurtzite structure with a growth direction of [001]. The electrical measurements are carried out based on nano‐field‐effect transistors fabricated by individual NWs, and the electron transport characteristics reveal that the ZnSe _0.7 Te _0.3 NWs have p‐type conductivity with a high‐mobility ( μ _h ) of 0.9 cm ² V ⁻¹ S ⁻¹ and carrier concentration ( n _h ) 5 × 10 ¹⁸ cm ⁻³ . Photoluminescence measurements for ZnSe _0.7 Te _0.3 NWs show a dominant emission peaked at 478 nm which is the emission of free exciton.