journal article·2024-10-02

Enhancing the Sodium Storage Performance of Na4MnCr(PO4)3 through the Manipulation of Intrinsic Site Occupation Defects

Suo Chen, Jie Hou, Xin He, Qingyuan Wang, Wei Wang, Min Zhou, Kangli Wang, Kai Jiang

ACS Applied Materials & Interfaces· Volume 16· Issue 39
Publisher page

Abstract

Manganese-based NASICON-type compounds are promising as high-energy-density cathodes for sodium-ion batteries. However, the structural defects of Mn ions inside the crystal framework reduce the sodium storage capacity, voltage plateau, and cyclic stability of the cathodes. Here, a strategy to inhibit the Mn ion defects of Na 4 MnCr(PO 4 ) 3 has been proposed by using different phosphate sources. It is found that Na 4 MnCr(PO 4 ) 3 prepared with NH 4 H 2 PO 4 (NMCP-N) exhibits less noticeable voltage hysteresis than that of Na 4 MnCr(PO 4 ) 3 prepared with H 3 PO 4 (NMCP-H), indicating that the site occupation defects of Mn ions in the Na 4 MnCr(PO 4 ) 3 crystal structure are successfully suppressed, as confirmed by theoretical calculations and structural refinements. In the case of NMCP-N, a capacity of 109.7 mAh g –1 is delivered at 0.01 A g –1, and 54.2% capacity retention can be kept after 500 cycles at 0.5 A g –1, which is much better than that of the counterpart of NMCP-H (a lower capacity of 96.1 mAh g –1 and poorer cyclability of only 22.8% capacity retention after 500 cycles), showing that the structure defects strongly affect the sodium storage properties of Na 4 MnCr(PO 4 ) 3 cathodes. This work provides an effective strategy to manipulate the structure defects of Mn-based NASICON-type cathode materials to enhance their electrochemistry.
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Research context

OpenAlex topics: Advancements in Battery Materials · Advanced Battery Materials and Technologies · Chemical Synthesis and Characterization

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Affiliations

State Key Laboratory of Materials Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China

State Key Laboratory of Advanced Electromagnetic Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China

Funding

National Natural Science Foundation of China

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