journal article·2024-08-07

Facilitating the Hydrogen Evolution Reaction on Basal-Plane S Sites on MoS2@Ni3S2 by Dual Ti and N Plasma Treatment

Ning Pang, Yun Li, Chang Wang, Xin Tong, Mengqiu Wang, Huiyun Shi, Dajun Wu, Dayuan Xiong, Shaohui Xu, Pavel B. Sorokin, Lianwei Wang, Lin Jiang, Paul K. Chu

ACS Applied Materials & Interfaces· Volume 16· Issue 31
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Abstract

Atomic engineering of the basal plane active sites in MoS 2 holds great promise to boost the electrocatalytic activity for hydrogen evolution reactions (HER), yet the performance optimization and mechanism exploration are still not satisfactory. Herein, we proposed a dual-plasma engineering strategy to implant Ti and N heteroatoms into the basal plane of MoS 2 supported by Ni 3 S 2 nanorods on nickel foam (MSNF) for efficient electrocatalysis of HER. Owing to the low formation energy of Ti dopants in MoS 2 and the extra charge carriers introduced by N dopants, the optimally codoped samples N1.0@Ti500-MSNF demonstrate significant morphology changes from nanorods to urchin-like nanospheres with the surface active areas increased by seven-fold, as well as enhanced electrical conductivity in comparison with the nondoped counterparts. The HER performance of N1.0@Ti500-MSNF is comparable with the Pt-based catalyst: overpotential of 26 mV at 20 mA cm –2, Tafel slope of 35.6 mV dec –1, and long-term stability over 50 h. First-principles calculation reveals that N doping accelerates the dissociation of water molecules while Ti doping activates the adjacent S sites for hydrogen adsorption by lowering the Gibbs free energy, resulting in excellent HER activity. This work thus provides an effective strategy for basal plane engineering of MoS 2 heterostructures toward high-performance HER and sustainable energy supply at reasonable costs.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Electrocatalysts for Energy Conversion · MXene and MAX Phase Materials · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, P. R. China

School of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, P. R. China

School of Microelectronics, Shanghai University, 20 Chengzhong Road, Shanghai 201800, P. R. China

Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, P. R. China

Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China

National University of Science and Technology “MISIS”, Leninsky prospect 4, Moscow 119049, Russian Federation

Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow 142190, Russia

Funding

Department of Education of Guangdong Province · City University of Hong Kong · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China · Shenzhen-Hong Kong Innovative Collaborative Research and Development Program · Shanghai High-level Talent start funding

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