Enhancement in Thermoelectric Performance in Ti-doped Yb0.4Co4Sb12 Skutterudites via Carrier Optimization and Phonon Anharmonicity
Source abstract
Abstract
Yb 0.4 Co 4 Sb 12, being a well-studied system, has shown notably high thermoelectric performance due to the Yb filler atom-driven large concentration of charge carriers and lower value of thermal conductivity. In this work, the thermoelectric performance of Yb z Co 4– x Ti x Sb 12 (where z = 0, x = 0 and z = 0.4, x = 0, 0.04, and 0.08) upon Ti doping prepared by the melt-quenched-annealing followed by spark plasma sintering (SPS) has been studied in the temperature range of 300–700 K. Addition of Yb and doping of donor Ti at the Co site simultaneously increase the electrical conductivity to 1453.5 S/cm at 300 K, which ultimately boosts the power factor as high as ∼4.3 mW/(m·K 2 ) at 675 K in Yb 0.4 Co 3.96 Ti 0.04 Sb 12 . Adversely, a significant reduction in thermal conductivity is obtained from ∼7.69 W/(m·K) (Co 4 Sb 12 ) to ∼3.50 W/(m·K) (Yb 0.4 Co 3.96 Ti 0.04 Sb 12 ) at ∼300 K. As a result, the maximum zT is achieved as ∼0.85 at 623 K with high hardness of 584 H V for the composition of Yb 0.4 Co 3.96 Ti 0.04 Sb 12, which demonstrates it to be an efficient material suitable for intermediate temperature thermoelectric applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Thermal Expansion and Ionic Conductivity
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Low Temperature Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
Department of Physics, Nano Functional Materials Technology Center and Materials Science Research Center, Indian Institute of Technology Madras, Chennai 600036, India
Laboratory for Energy and Advanced Devices (LEAD), Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Chengalpattu 603203, India
Advanced Materials and Device Metrology Division, National Physical Laboratory, New Delhi 110012, India
New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, Karnataka 560 064, India
Laboratory for Energy and Advanced Devices (LEAD), Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology, Hyderabad, Telangana 502 285, India
Quantum Centre of Excellence for Diamond and Emergent Materials (QuCenDiEM), Indian Institute of Technology Madras, Chennai 600036, India
Funding
University Grants Commission · Science and Engineering Research Board · Nano Functional Materials Technology Centre, Indian Institute of Technology Madras
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