Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing
Source abstract
Abstract
The formation mechanism of the partially crystallized ultrathin layer at the interface between GaN and SiNx grown by low-pressure chemical vapor deposition was analyzed based on the chemical components of reactants and products detected by high-resolution sputter depth profile analysis by X-ray photoelectron spectroscopy. A reasonable mass action equation for the formation of Si2N2O was proposed from the feasibility analysis of the Gibbs free energy changes of the reaction. The high-energy-activated Ga2O on the surface likely assists in the synthesis of the crystallized components. A well-defined 1ML θ-Ga2O3 transition interface was inserted into Si2N2O/GaN pure interface supercell slabs to edit the unsaturated state of the bonds. Low-density states can be achieved when the effective charges of the unsaturated atoms are adjusted to a certain interval.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Funding
University of Chinese Academy of Sciences · Ministry of Science and Technology of the People's Republic of China · Youth Innovation Promotion Association of the Chinese Academy of Sciences · National Natural Science Foundation of China · Chinese Academy of Sciences · Key Laboratory of Microelectronic Devices & Integrated Technology
References (68)
Show source-provided references
1. 10.1109/LED.2017.275692610.1109/LED.2017.2756926 ↗
2. 10.1063/1.499068910.1063/1.4990689 ↗
3. 10.1063/1.12200910.1063/1.122009 ↗
4. 10.1109/LED.2015.243203910.1109/LED.2015.2432039 ↗
5. 10.7567/JJAP.53.08NH0210.7567/JJAP.53.08NH02 ↗
6. 10.1109/LED.2012.218592110.1109/LED.2012.2185921 ↗
7. 10.1109/IEDM.2014.704707110.1109/IEDM.2014.7047071 ↗
8. 10.7567/JJAP.57.06KA0310.7567/JJAP.57.06KA03 ↗
9. 10.7567/1347-4065/ab0f1610.7567/1347-4065/ab0f16 ↗
10. 10.1109/ISPSD.2012.622901710.1109/ISPSD.2012.6229017 ↗
11. 10.1063/1.489857710.1063/1.4898577 ↗
12. 10.1021/acs.nanolett.6b0363810.1021/acs.nanolett.6b03638 ↗
13. 10.1109/LED.2015.240987810.1109/LED.2015.2409878 ↗
14. 10.1109/LED.2016.261738110.1109/LED.2016.2617381 ↗
15. 10.1116/1.494466210.1116/1.4944662 ↗
16. 10.1109/LED.2019.295165510.1109/LED.2019.2951655 ↗
17. 10.1063/1.494577510.1063/1.4945775 ↗
18. 10.1021/acsami.8b0469410.1021/acsami.8b04694 ↗
19. 10.1109/LED.2017.270747310.1109/LED.2017.2707473 ↗
20. 10.1088/0268-1242/31/6/06501410.1088/0268-1242/31/6/065014 ↗
21. 10.1116/1.58373610.1116/1.583736 ↗
22. 10.1109/TED.2018.281221510.1109/TED.2018.2812215 ↗
23. Zhou X. · 2019 · 12
24. 10.1126/science.165.3900.136310.1126/science.165.3900.1363 ↗
25. Yang S. · 2013 · 9
26. 10.1116/1.158507710.1116/1.1585077 ↗
27. 10.1063/1.343139110.1063/1.3431391 ↗
28. 10.1007/s10967-015-4102-910.1007/s10967-015-4102-9 ↗
29. 10.1103/PhysRev.140.A113310.1103/PhysRev.140.A1133 ↗
30. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
31. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
32. 10.1063/1.218700610.1063/1.2187006 ↗
33. 10.1063/1.37186610.1063/1.371866 ↗
34. 10.1111/j.1151-2916.2004.tb06352.x10.1111/j.1151-2916.2004.tb06352.x ↗
35. 10.1063/1.11796410.1063/1.117964 ↗
36. 10.1063/1.36881410.1063/1.368814 ↗
37. 10.1149/1.311956110.1149/1.3119561 ↗
38. 10.1063/1.312054610.1063/1.3120546 ↗
39. Chastain J. · 1992
40. 10.1016/0169-4332(94)90104-X10.1016/0169-4332(94)90104-X ↗
41. 10.1021/acsami.6b1537010.1021/acsami.6b15370 ↗
42. 10.1116/6.000041210.1116/6.0000412 ↗
43. 10.1016/S0022-3115(98)00484-X10.1016/S0022-3115(98)00484-X ↗
44. 10.1016/0304-5102(93)87046-B10.1016/0304-5102(93)87046-B ↗
45. 10.1063/1.140296610.1063/1.1402966 ↗
46. 10.1002/sia.74016011610.1002/sia.740160116 ↗
47. 10.1016/0042-207X(90)94025-L10.1016/0042-207X(90)94025-L ↗
48. 10.1111/j.1151-2916.1986.tb04738.x10.1111/j.1151-2916.1986.tb04738.x ↗
49. Roberts, A. Using Different Photon Energies to Eliminate Core Line/Auger Peak Overlap in XPS. (accessed 1st Jan.).
50. 10.1016/0169-4332(92)90219-N10.1016/0169-4332(92)90219-N ↗
51. 10.1149/1.209695510.1149/1.2096955 ↗
52. 10.1063/1.133055910.1063/1.1330559 ↗
53. 10.1016/0022-4596(78)90043-910.1016/0022-4596(78)90043-9 ↗
54. 10.1103/PhysRevB.49.1115910.1103/PhysRevB.49.11159 ↗
55. 10.1016/0925-8388(95)01982-010.1016/0925-8388(95)01982-0 ↗
56. 10.1063/1.500392110.1063/1.5003921 ↗
57. 10.1149/1.183857410.1149/1.1838574 ↗
58. 10.7567/1347-4065/ab0ad210.7567/1347-4065/ab0ad2 ↗
59. Chase M. W. · 1998
60. 10.1111/j.1151-2916.1998.tb02459.x10.1111/j.1151-2916.1998.tb02459.x ↗
61. 10.1155/2012/62047510.1155/2012/620475 ↗
62. 10.1007/BF0238772610.1007/BF02387726 ↗
63. 10.1063/1.315195410.1063/1.3151954 ↗
64. 10.1021/ja017284n10.1021/ja017284n ↗
65. 10.1039/f1974700228010.1039/f19747002280 ↗
66. 10.1111/j.1151-2916.1981.tb10333.x10.1111/j.1151-2916.1981.tb10333.x ↗
67. 10.1016/j.jcrysgro.2009.05.01610.1016/j.jcrysgro.2009.05.016 ↗
68. 10.7567/APEX.11.06110110.7567/APEX.11.061101 ↗