Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion
Source abstract
Abstract
The world requires inexpensive, reliable, and sustainable energy sources. Solar photovoltaic (PV) technology, which converts sunlight directly into electricity, is an enormously promising solution to our energy challenges. This promise increases as the efficiencies are improved. One straightforward method of increasing PV device efficiency is to utilize multi-junction cells, each of which is responsible for absorbing a different range of wavelengths in the solar spectrum. Indium gallium nitride (In x Ga1−x N) has a variable band gap from 0.7 to 3.4 eV that covers nearly the whole solar spectrum. In addition, In x Ga1−x N can be viewed as an ideal candidate PV material for both this potential band gap engineering and microstructural engineering in nanocolumns that offer optical enhancement. It is clear that In x Ga1−x N is an extremely versatile potential PV material that enables several known photovoltaic device configurations and multi-junctions with theoretic efficiencies over 50 pct. This potential is driving immense scientific interest in the material system. This paper reviews the solar PV technology field and the basic properties of In x Ga1−x N materials and PV devices. The challenges that remain in realizing a high-efficiency In x Ga1−x N PV device are summarized along with paths for future work. Finally, conclusions are drawn about the potential for In x Ga1−x N photovoltaic technology in the future.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
Show source-provided references
1. J.M. Pearce: Futures, 2002, vol. 34, pp. 663-74.10.1016/S0016-3287(02)00008-3 ↗
2. A. Jäger-Waldau: PV Status Report 2011: Research, Solar Cell Production and Market Implementation of Photovoltaics, European Commission, DG Joint Research Centre, Institute for Energy and Transport, Renewable Energy Unit, Ispra, VA, Italy. http://re.jrc.ec.europa.eu/refsys/.
3. K. Branker, M.J.M. Pathak, J.M. Pearce: Renew. Sust. Energ. Rev., 2011, vol. 15, pp. 4470-4482.10.1016/j.rser.2011.07.104 ↗
4. R. Keiser: PV Tech, 2011. http://www.pv-tech.org/guest_blog/100gw_of_demand_and_the_coming_inflection_point_in_the_us_solar_market.
5. M.A. Green: Third Generation Photovoltaics: Advanced Solar Energy Conversion, 1st ed., Springer, Berlin, 2003.
6. M.A. Green: Third Generation Photovoltaics: Advanced Solar Energy Conversion, 2nd ed., Springer, Berlin, 2005, pp. 59-69.
7. J.M. Woodcock, H. Schade, H. Maurus, B. Dimmler, J. Springer, and A. Ricaud: in Proc. 14th European PV Solar Energy Conference, Barcelona, pp. 857–60.
8. V.Y. Davydov, A.A. Klochikhin, R.P. Seisyan, V.V. Emtsev, S.V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A.V. Mudryi, J. Aderhold, O. Semchinova, J. Graul: Phys. Status Solidi B, 2002, 229, p. R1.10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO;2-O ↗
9. Y. Saito, H. Harima, E. Kurimoto, T. Yamaguchi, N. Teraguchi, A. Suzuki, T. Araki, Y. Nanishi: Phys. Status Solidi B, 2002, vol. 234, pp. 796-800.10.1002/1521-3951(200212)234:3<796::AID-PSSB796>3.0.CO;2-H ↗
10. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, E. Kurimoto: Appl. Phys. Lett., 2002, vol. 81, pp. 1246-48.10.1063/1.1499753 ↗
11. J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, Y. Nanishi: Appl. Phys. Lett., 2002, vol. 80, pp. 3967-69.10.1063/1.1482786 ↗
12. J. Wu, W. Walukiewicz, W. Shan, K.M. Yu, J.W. Ager, S.X. Li, E.E. Haller, H. Lu, W.J. Schaff: J. Appl. Phys., 2003, vol. 94 (7), pp. 4457-60.10.1063/1.1605815 ↗
13. B. Arnaudov, T. Pashkova, P.P. Paskov, B. Magnusson, E. Valcheva, B. Monemar, H. Lu, W.J. Schaff, H. Amano, I. Akasaki: Phys. Rev. B, 2004, vol. 69, pp. 115216-21.10.1103/PhysRevB.69.115216 ↗
14. W. Walukiewicz, S.X. Li, J. Wu, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff: J. Cryst. Growth, 2004, vol. 269, pp. 119-27.10.1016/j.jcrysgro.2004.05.041 ↗
15. B. Monemar, P.P. Paskov, A. Kasic: Superlatt. Microstruct., 2005, vol. 38, pp. 38-56.10.1016/j.spmi.2005.04.006 ↗
16. H. Morkoc, S. Strite, B.G. Gao, M.E. Lin, B. Sverdlov, M. Burns: J. Appl. Phys. Rev., 1994, vol. 76, pp. 1363-98.10.1063/1.358463 ↗
17. S.N. Mohammad and H. Morkoc: Prog. Quantum Electron., 1996, vol. 20, pp. 361-525.10.1016/S0079-6727(96)00002-X ↗
18. S.P. Denbaar: Proc. IEEE, 1997, vol. 85, pp. 1740-46.10.1109/5.649651 ↗
19. O. Ambacher: J. Phys. D: Appl. Phys., 1998, vol. 31, pp. 2653-2710.10.1088/0022-3727/31/20/001 ↗
20. S.J. Pearton, J.C. Zolper, R.J. Shul, F. Ren: J. Appl. Phys., 1999, vol. 86, pp. 1-78.10.1063/1.371145 ↗
21. S.J. Pearton, F. Ren, A.P. Zhang, K.P. Lee: Mater. Sci. Eng R 2000, vol. 30, pp. 55-212.10.1016/S0927-796X(00)00028-0 ↗
22. R.F. Davis, A.M. Roskowski, E.A. Preble, J.S. Speck, B. Heying, J.A. Feitas, E.R. Glaser Jr., W.E. Carlos: Proc. IEEE, 2002, vol. 90, pp. 993-1005.10.1109/JPROC.2002.1021564 ↗
23. M. Higashiwaki, T. Inushima, T. Matsui: Phys. Status Solidi B, 2003, vol. 240, pp. 417-20.10.1002/pssb.200303349 ↗
24. M.A. Reshchikov and H. Morkoc: J. Appl. Phys., 2005, vol. 97, pp. 061301-96.10.1063/1.1868059 ↗
25. F.K. Yam and Z. Hassan: Superlatt. Microstruct., 2008, vol. 43 (1), pp. 1–23.10.1016/j.spmi.2007.05.001 ↗
26. Y. Pan, T. Wang, K. Shen, T. Peng, K. Wu, W. Zhang, C. Liu: J. Cryst. Growth, 2010, vol. 313, pp. 16-19.10.1016/j.jcrysgro.2010.10.033 ↗
27. L. Cao, J.S. White, J.S. Park, J.A. Schuller, B.M. Clemens, M.L. Brongersma: Nat. Mater., 2009, vol. 8, pp. 643-47.10.1038/nmat2477 ↗
28. Z. Fan, H. Razavi, J. Do, A. Moriwaki, O. Ergen, Y.L. Chueh, P.W. Leu, J.C. Ho, T. Takahashi, L.A. Reichertz, S. Neale, K. Yu, M. Wu, J.W. Ager, A. Javey: Nat. Mater., 2009, vol. 8 (8), pp. 648–53.10.1038/nmat2493 ↗
29. L. Tsakalakos, J. Balch, J. Fronheiser, B.A. Korevaar, O. Sulima, J. Rand: Appl. Phys. Lett., 2007, vol. 91, pp. 233117/1–233117/3.10.1063/1.2821113 ↗
30. S. Keating, M.G. Urquhart, D.V.P. McLaughlin, J.M. Pearce: Cryst. Growth Des., 2011, vol. 11 (2), pp. 565–68.10.1021/cg101450n ↗
31. M.D. Kelzenberg, D.B. Turner-Evans, B.M. Kayes, A. Michael, M.C. Putnam, N.S. Lewis, and H.A. Atwater: Nano Lett., 2008, vol. 8 (2), pp. 710–14.10.1021/nl072622p ↗
32. T. J. Kempa, B. Tian, D. R. Kim, J. Hu, X. Zheng, C. M. Lieber: Nano Lett. 2008, vol. 8 (10), pp. 3456-60.10.1021/nl8023438 ↗
33. H.P.T. Nguyen, Y.L. Chang, I. Shih, Z. Mi: IEEE J. Sel. Topics Quantum Electron., 2011, vol. 17 (4), pp. 1062-69.10.1109/JSTQE.2010.2082505 ↗
34. R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif and N. H. Karam: Appl. Phys. Lett., 2007, vol. 90, pp. 183516-19.10.1063/1.2734507 ↗
35. A. Marti and G. Araujo: Sol. Energy Mater Sol. Cells, 1996, vol. 43, pp. 203-22.10.1016/0927-0248(96)00015-3 ↗
36. M. Anani, H. Abid, Z. Chama, C. Mathieu, A. Sayede, B. Khelifa: Microelectron. J., 2007, vol. 38 (2), pp. 262–66.10.1016/j.mejo.2006.11.001 ↗
37. X.M. Cai, S.W. Zeng, and B.P. Zhang: Appl. Phys. Lett., 2009, vol. 95 (17), p. 173504.10.1063/1.3254215 ↗
38. C. Boney, I. Hernandez, R. Pillai, D. Starikov, A. Bensaoula, M. Henini, M. Syperek, J. Misiewicz, R. Kudrawiec: Physica Status Solidi (c), 2011, vol. 8, pp. 2460–62.10.1002/pssc.201000993 ↗
39. L. A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz, J. W. Ager: Appl. Phys. Express, 2009, vol. 2 (12), p. 122202-1–122202-3.10.1143/APEX.2.122202 ↗
40. C.J. Neufeld, N.G. Toledo, S.C. Cruz, M. Iza, S.P. DenBaars, U.K. Mishra: Appl. Phys. Lett., 2008, 93, pp. 143502-1–143502-3.10.1063/1.2988894 ↗
41. J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, J. S. Speck: Appl. Phys. Lett., 2011, vol. 98 (13), pp. 131115-1–131115-3.10.1063/1.3575563 ↗
42. E. Matioli, C. Neufeld, M. Iza, S.C. Cruz, A.A. Al-Heji, X. Chen, R.M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, C. Weisbuch: Appl. Phys. Lett., 2011, vol. 98, pp. 021102-1–021102-3.
43. O. Jani, I. Ferguson, C. Honsberg, S. Kurtz: Appl. Phys. Lett., 2007, vol. 91, pp. 132117-1–132117-3.10.1063/1.2793180 ↗
44. D.Y. Zhang, X.H. Zheng, L.J. Tang, J.R. Dong, H. Wang, H. Yang: IEEE Electron. Device Lett., 2010, vol. 31 (12), pp. 1422-24.10.1109/LED.2010.2074176 ↗
45. R.Y. Horng, S.T. Lin, Y.L. Tsai, M.T. Chu, W.Y. Liao, M.H. Wu, R.M. Lin, Y.C. Lu: IEEE Electron. Device Lett., 2009, vol. 30, pp. 724-26.10.1109/LED.2009.2021414 ↗
46. X. Zheng, R.H. Horng, D.S. Wuu, M.T. Chu, W.Y. Liao, M.H. Wu, R.M. Lin, Y.C. Lu: Appl. Phys. Lett., 2008, vol. 93, pp. 261108-1–261108-3.
47. E. Trybus, O. Jani, S. Burnham, I. Ferguson, C. Honsberg, M. Steiner, W.A. Doolittle: Phys. Status Solidi C, 2008, vol. 5 (6), pp. 1843-45.10.1002/pssc.200778693 ↗
48. X. Chen, K.D. Matthews, D. Hao, W.J. Schaff, L.F. Eastman: Phys. Status. Solidi. A, 2008, vol. 205, pp. 1103-05.10.1002/pssa.200778695 ↗
49. C. Boney, I. Hernandez, R. Pillai, D. Starikov, A. Bensaoula, M. Henini, M. Syperek, J. Misiewicz, and R. Kudrawiec: IEEE Phot. Spec. Conf., 2010, pp. 003316–003321.10.1109/PVSC.2010.5617082 ↗
50. R. Dahal, B. Pantha, J. Li, Y.J. Lin, H.X. Jiang: Appl. Phys. Lett., 2009, vol. 94, pp. 063505-1–063505-3.10.1063/1.3081123 ↗
51. R. Dahal, J. Li, K. Aryal, J.Y. Lin, H.X. Jiang: Appl. Phys. Lett., 2010, vol. 97, pp. 073115-1–073115-3.
52. I.M. Pryce, D.D. Koleske, A.J. Fischer, H.A. Atwater: Appl. Phys. Lett., 2010, vol. 96 (15), pp. 153–156.10.1063/1.3377900 ↗
53. K.Y. Lai, G.J. Lin, Y.L. Lai, Y.F. Chen, J.H. He: Appl. Phys. Lett., 2010, vol. 96 (8), pp. 081103-1–081103-3.10.1063/1.3327331 ↗
54. M.J. Jeng, Y.L. Lee, and L.B. Chang: J. Phys. D Appl. Phys., 2009, vol. 42 (10), p. 105101.10.1088/0022-3727/42/10/105101 ↗
55. Y.-J. Lee, M.-H. Lee, C.-M. Cheng, C.-H. Yang: Appl. Phys. Lett., 2011, vol. 98 (26), pp. 263504-1–263504-3.
56. A. Bhuiyan, K. Sugita, A. Hashimoto, A. Yamamoto: IEEE J. Photovoltaics, 2012, vol. 2, pp. 276 –93.10.1109/JPHOTOV.2012.2193384 ↗
57. Y. Kawakami, S. Suzuki, A. Kaneta, M. Funato, A. Kikuchi, and K. Kishino: Appl. Phys. Lett., 2006, vol. 89, pp. 163124-1–163124-3.10.1063/1.2363958 ↗
58. A. Laubsch, M. Sabathil, J. Baur, M. Peter, B. Hahn: IEEE Trans. Electron. Devices. 2010, vol. 57 (1), pp. 79–87.10.1109/TED.2009.2035538 ↗
59. N. Trivellin, M. Meneghini, E. Zanoni, K. Orita, M. Yuri, T. Tanaka, D. Ueda, and G. Meneghesso: IEEE International Reliability Physics Symposium, 2010, 2010, pp. 1–6.10.1109/IRPS.2010.5488866 ↗
60. D. Sizov, R. Bhat, and C.-E. Zah: J. Lightwave Technol., 2012, vol. 30 (5), pp. 679–99.10.1109/JLT.2011.2176918 ↗
61. J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pfister, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, S. Nakamura: Proc. SPIE, 2010, vol. 7602, 760218.10.1117/12.840783 ↗
62. J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. Denbaars, S. Nakamura: Proc. SPIE 2010, vol. 7686, 76860L.10.1117/12.849713 ↗
63. Q.A.H. Al-Naser, H.W. Hilou, and A.F. Abdulkader: ISECS International Colloquium on Computing, Communication, Control, and Management, 2009, vol. 1, pp. 373–78.10.1109/CCCM.2009.5268104 ↗
64. H. Hamzaoui, A.S. Bouazzi, B. Rezig: Sol. Energy Mater. Sol. Cells, 2005, vol. 87, pp. 595-603.10.1016/j.solmat.2004.08.020 ↗
65. V.Y. Davydov, A.A. Klochikhin, V.V. Emtsev, D.A. Kurdyukov, S.V. Ivanov, V.A. Vekshin, F. Bechstedt, J. Furthmuller, J. Aderhold, J. Graul, A.V. Mudryi, H. Harima, A. Hashimoto, A. Yamamoto, E.E. Haller: Phys. Status Solidi B, 2002, vol. 234 (3), pp. 787-95.10.1002/1521-3951(200212)234:3<787::AID-PSSB787>3.0.CO;2-H ↗
66. Y. Sato and S. Sato: Thin Solid Films, 1995, vol. 261, pp. 87-89.
67. S. Nishimura, K. Terashima, and H. Nagayoshi: IEEE Photo. Spec. Conf., 2005, pp. 725–27.
68. V. Fiorentini and F. Bernardini: Phys. Status Solidi B, 1999, vol. 216 (1), pp. 391-98.10.1002/(SICI)1521-3951(199911)216:1<391::AID-PSSB391>3.0.CO;2-K ↗
69. F. Bernardini and V. Fiorentini: Phys. Rev. B, 2001, vol. 64, pp. 085207/1–085207/7.10.1103/PhysRevB.64.085207 ↗
70. O. Jani, C. Honsberg, Y. Huang, J.O. Song, I. Ferguson, G. Namkoong, E. Trybus, A. Doolittle, and S. Kurtz: IEEE 4th World Conference on Photovoltaic Energy Conversion: Conference Record, 2006, pp. 20–25.10.1109/WCPEC.2006.279337 ↗
71. J.J. Wierer, A.J. Fischer, D.D. Koleske: Appl. Phys. Lett., 2010, vol. 96 (5), pp. 051107-1–051107-3.10.1063/1.3301262 ↗
72. Y. Nanishi, Y. Saito, T. Yamaguchi: Jpn. J. Appl. Phys., 2003, vol. 15 (42), pp. 2549–59.10.1143/JJAP.42.2549 ↗
73. J. Wu, W. Walukiewicz, K.M. Yu, W. Shan, J.W. Ager, E.E. Haller, H. Lu, W.J. Schaff, W.K. Metzger, S. Kurtz: J. Appl. Phys., 2003, vol. 94 (10), 6477-82.10.1063/1.1618353 ↗
74. T. Yamaguchi, C. Morioka, K. Mizuo, M. Hori, T. Araki, Y. Nanishi, and A. Suzuki: IEEE International Symposium on Compound Semiconductors: Post-Conference Proceedings, 2003, pp. 214–19.
75. C. Yang: Phys. Status Solidi A, 2007, vol. 204(12), pp. 4288–91.10.1002/pssa.200723202 ↗
76. O. Jani, B. Jampana, M. Mehta, M. Yu, I. Ferguson, R. Opila, and C. Honsberg: 33rd IEEE Photovoltaic Specialists Conference, 2008, pp. 1–4.10.1109/PVSC.2008.4922725 ↗
77. S.W. Zeng, B.P. Zhang, J.W. Sun, J.F. Cai, C. Chen, J.Z. Yu: Semicond. Sci. Technol., 2009, vol. 24, 055009.10.1088/0268-1242/24/5/055009 ↗
78. B. W. Liou: Thin Solid Films, 2011, vol. 520 (3), pp. 1084–90.10.1016/j.tsf.2011.01.086 ↗
79. F.R. Hu, K. Ochi, Y. Zhao, K. Hane: Phys. Status Solidi C, 2007, vol. 4, pp. 2338-41.10.1002/pssc.200674734 ↗
80. H.M. Kim, H. Lee, S.I. Kim, S.R. Ryu, T.W. Kang, K.S. Chung: Phys. Status Solidi B, 2004, vol. 241, pp. 2802-05.10.1002/pssb.200405043 ↗
81. T. Kuykendall, P. Ulrich, S. Aloni, P. Yang: Nat. Mater., 2007, vol. 6, pp. 951-56.10.1038/nmat2037 ↗
82. K.M. Wu, Y. Pan, C. Liu: Appl. Surf. Sci., 2009, vol. 255 (13–14), pp. 6705-09.10.1016/j.apsusc.2009.02.065 ↗
83. H. Sekiguchi, T. Nazakato, A. Kikuchi, K. Kishino: J. Cryst. Growth, 2007, vol. 300 (1), pp. 259-62.10.1016/j.jcrysgro.2006.11.036 ↗
84. A. Kikuchi, K. Yamano, M. Tada, K. Kishino: Phys. Status Solidi B, 2004, vol. 241 (12), pp. 2754-58.10.1002/pssb.200405103 ↗
85. A.P. Vajpeyi, A.O. Ajagunna, K. Tsagaraki, M. Androulidaki, and A. Georgakilas: Nanotechnology, 2009, vol. 20 (32), 325605.10.1088/0957-4484/20/32/325605 ↗
86. X.M. Cai, F. Ye, S.Y. Jing, D.P. Zhang, P. Fan, E.Q. Xie: J. Alloy Compd., 2009, vol. 467 (1-2), pp. 472-76.10.1016/j.jallcom.2007.12.018 ↗
87. H.M. Kim, Y.C. Cho, D.Y. Kim, T.Y. Kang, and K.S. Chung: AIP Conference Proceedings, 2005, vol. 772 (1), pp. 1515–16.10.1063/1.1994691 ↗
88. M. Einav, D.V.P. McLaughlin, and J.M. Pearce: ISPlasma 2011 Proceedings, 2011, P3-087A-LN.
89. D.V.P. McLaughlin and J.M. Pearce: Mater. Sci. Eng. B, 2012, vol. 177 (2), pp. 239-44.10.1016/j.mseb.2011.12.008 ↗
90. E. Calleja, M.A. Sanchez-Garcia, F.J. Sanchez, F. Calle, F.B. Naranjo, E. Munoz, U. Jahn, K. Ploog: Phys. Rev. B, 2000, vol. 62 (24), pp. 16826-34.10.1103/PhysRevB.62.16826 ↗
91. E.A. Stach, P.J. Pauzauskie, T. Kuykendall, J. Goldberger, R. He, P. Yang: Nano Lett., 2003, vol. 3, pp. 867-69.10.1021/nl034222h ↗
92. Y. Wu and P.J. Yang: Am. Chem. Soc., 2001, vol. 123, pp. 3165-6.10.1021/ja0059084 ↗
93. T. Kuykendall, P. Pauzauskie, Y. Zhang, J. Goldberger, D. Sirbuly, J. Denlinger, P. Yang: Nat. Mater., 2004, vol. 3 (8), pp. 524-28.10.1038/nmat1177 ↗
94. J. Ristić, M.A. Sanchez-Garcia, E. Calleja, J. Sanchez-Paramo, J.M. Calleja, U. Jahn, K.H. Ploog: Phys. Status Solidi A, 2002, vol. 192, pp. 60-66.10.1002/1521-396X(200207)192:1<60::AID-PSSA60>3.0.CO;2-O ↗
95. S. Guha, N.A. Bojarczuk, M.A.L. Johnson, J.F. Schetzina: Appl. Phys. Lett., 1999, vol. 75, pp. 463-65.10.1063/1.124409 ↗
96. T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano, I. Akasaki: Jpn. J. Appl. Phys., 1997, vol. 36, L177-79.10.1143/JJAP.36.L177 ↗
97. M. Leszczynski, R. Czernecki, S. Krukowski, M. Krysko, G. Targowski, P. Prystawko, J. Plesiewicz, P. Perlin, T.J. Suski: J. Cryst. Growth, 2011, vol. 318, pp. 496-99.10.1016/j.jcrysgro.2010.10.050 ↗
98. M. Gartner, C. Kruse, M. Modreanu, A. Tausendfreund, C. Roder, D. Hommel: Appl. Surf. Sci, 2006, vol. 253 (1), pp. 254-57.10.1016/j.apsusc.2006.05.077 ↗
99. C.A. Parker, J.C. Robers, S.M. Bedair, M.J. Reed, S.X. Liu, N.A. El-Masry: Appl. Phys. Lett., 1999, vol. 75 (18), pp. 2776-78.10.1063/1.125146 ↗
100. N. Faleev, B. Jampana, O. Jani, H. Yu, R. Opila, I. Ferguson, C. Honsberg: Appl. Phys. Lett., 2009, vol. 95 (5), pp. 051915-1–051915-3.10.1063/1.3202409 ↗