journal article·2024-01-17

Damping and Interfacial Dzyaloshinskii–Moriya Interaction in Thulium Iron Garnet/Bismuth-Substituted Yttrium Iron Garnet Bilayers

Takian Fakhrul, Bharat Khurana, Byung Hun Lee, Siying Huang, Hans T. Nembach, Geoffrey S. D. Beach, Caroline A. Ross

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Abstract

Thin films of ferrimagnetic iron garnets can exhibit useful magnetic properties, including perpendicular magnetic anisotropy (PMA) and high domain wall velocities. In particular, bismuth-substituted yttrium iron garnet (BiYIG) films grown on garnet substrates have a low Gilbert damping but zero Dzyaloshinskii–Moriya interaction (DMI), whereas thulium iron garnet (TmIG) films have higher damping but a nonzero DMI. We report the damping and DMI of thulium-substituted BiYIG (BiYTmIG) and TmIG|BiYIG bilayer thin films deposited on (111) substituted gadolinium gallium garnet and neodymium gallium garnet (NGG) substrates. The films are epitaxial and exhibit PMA. BiYIG|TmIG bilayers have a damping value that is an order of magnitude lower than that of TmIG, and BiYIG|TmIG|NGG have DMI of 0.0145 ± 0.0011 mJ/m 2, similar to that of TmIG|NGG. The bilayer therefore provides a combination of DMI and moderate damping, useful for the development of high-speed spin orbit torque-driven devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Magneto-Optical Properties and Applications · Magnetic properties of thin films · Metallic Glasses and Amorphous Alloys

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Associate, Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305, United States

Department of Physics, University of Colorado Boulder, Boulder, Colorado 80309, United States

Funding

Defense Advanced Research Projects Agency · National Institute of Standards and Technology · Semiconductor Research Corporation · Division of Materials Research

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