Ultrahigh Brightening of Infrared PbS Quantum Dots via Collective Energy Transfer Induced by a Metal-Oxide Plasmonic Metastructure

We demonstrate that a solution-processed heterojunction interface formed via the addition of a thin buffer layer of CdSe/ZnS quantum dots (QDs) to a functional metal oxide plasmonic metastructure (FMOP) can set up a collective interquantum dot energy-transport process, significantly enhancing the emission of infrared PbS quantum dots. The FMOP includes a Schottky junction, formed via deposition of a Si layer on arrays of Au nanoantennas and a Si/Al oxide charge barrier. We show when these two junctions are separated from each other by about 15 nm and the CdSe/ZnS quantum dot buffer layer is placed in touch with the Si/Al oxide junction, the quantum efficiency of an upper layer of PbS quantum dots can increase by about 1 order of magnitude. These results highlight a unique energy circuit formed via collective coupling of the CdSe/ZnS quantum dots with the hybridized states of plasmons and diffraction modes of the arrays (surface lattice resonances) and coupling between such resonances with PbS QDs via lattice-induced photonic modes.