Alkali Metal Pretreatment for Precise Na Doping andVocImprovement in CIGS Thin-Film Solar Cells
Source abstract
Abstract
The pretreatment of the Cu(In,Ga)Se 2 (CIGS) absorption layer using an alkali element can effectively improve the photoelectric conversion efficiency (PCE) of CIGS solar cells. Here, we propose using NaF layer pretreatment below the CIGS absorption layer deposited by a three-stage process. Sodium ions in NaF can effectively suppress the diffusion of Ga elements and form a steep gradient backscatter layer on the back of the CIGS absorption layer, thereby passivating solar cell defects, inhibiting carrier recombination, promoting carrier transmission and collection, improving open circuit voltage ( V OC ), short circuit current ( J sc ), and filling factor (FF), and further improving the PCE.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People’s Republic of China
University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
Shanghai Spaceflight Precision Machinery Institute, Shanghai 201600, China
Department of Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · SIAT-CUHK Joint Laboratory of Photovoltaic Solar Energy · Shenzhen & HongKong Joint Research Program
References (43)
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