journal article·2023-07-26Open access

Optical Properties of MoSe2 Monolayer Implanted with Ultra-Low-Energy Cr Ions

Minh N. Bui, Stefan Rost, Manuel Auge, Lanqing Zhou, Christoph Friedrich, Stefan Blügel, Silvan Kretschmer, Arkady V. Krasheninnikov, Kenji Watanabe, Takashi Taniguchi, Hans C. Hofsäss, Detlev Grützmacher, Beata E. Kardynał

ACS Applied Materials & Interfaces· Volume 15· Issue 29

Abstract

High Resolution Image Download MS PowerPoint Slide This paper explores the optical properties of an exfoliated MoSe 2 monolayer implanted with Cr + ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe 2 reveals an emission line from Cr-related defects that is present only under weak electron doping. Unlike band-to-band transition, the Cr-introduced emission is characterized by nonzero activation energy, long lifetimes, and weak response to the magnetic field. To rationalize the experimental results and get insights into the atomic structure of the defects, we modeled the Cr-ion irradiation process using ab initio molecular dynamics simulations followed by the electronic structure calculations of the system with defects. The experimental and theoretical results suggest that the recombination of electrons on the acceptors, which could be introduced by the Cr implantation-induced defects, with the valence band holes is the most likely origin of the low-energy emission. Our results demonstrate the potential of low-energy ion implantation as a tool to tailor the properties of two-dimensional (2D) materials by doping.
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Research context

OpenAlex topics: 2D Materials and Applications · Quantum Dots Synthesis And Properties · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Peter Grünberg Institute 9 (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany

Department of Physics, RWTH Aachen University, 52074 Aachen, Germany

Peter Grünberg Institute 1 (PGI-1) and Institute for Advanced Simulation 1 (IAS-1), Forschungszentrum Jülich and JARA, 52425 Jülich, Germany

II. Institute of Physics, University of Göttingen, 37077 Göttingen, Germany

Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany

Department of Applied Physics, Aalto University School of Science, P.O. Box 11100, 00076 Aalto, Finland

Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funding

Deutsche Forschungsgemeinschaft · Japan Society for the Promotion of Science · Volkswagen Foundation

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