Source abstract
Abstract
Ferromagnets with a Curie temperature surpassing room temperature (RT) are highly sought after for advancing planar spintronics. The ultrathin CrTe 2 is proposed as a promising two-dimensional (2D) ferromagnet with a Curie temperature above 300 K. However, its single-layer film is highly susceptible to specific external perturbations, leading to variable magnetic features depending on the environment. The magnetic ordering of single-layer CrTe 2 remains a topic of debate, and experimental confirmation of ferromagnetic order at RT is still pending. In our study, we utilized molecular beam epitaxy to create a single-layer 1T-CrTe 2 on bilayer graphene, demonstrating ferromagnetism above 300 K with in-plane magnetization through superconducting quantum interference devices (SQUID) measurements. Our density functional theory (DFT) calculations suggest that the ferromagnetic properties stem from epitaxial strain, which increases the distance between adjacent Cr atoms within the layer by about 1.6% and enhances the Cr–Te–Cr angle by approximately 1.6°. Due to its interaction with the graphene substrate, the magnetic moment transitions from an out-of-plane to an in-plane orientation, while electronic doping exceeds 1.5 e/u.c. Combining DFT calculations with in situ scanning tunneling microscopy (STM) characterizations allowed us to determine the configuration of the CrTe 2 single layer on graphene. This discovery presents the first experimental proof of ferromagnetic order in single-layer CrTe 2 with a Curie temperature above RT, laying the groundwork for future applications of CrTe 2 single-layer-based spintronic devices.
Source: openalex_inverted_index · Quality: baseline
Affiliations
College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
Department of Physics, Capital Normal University, Beijing 100048, P. R. China
Kunming Institute of Physics, Kunming 650223, P. R. China
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China