journal article·2020-09-16

Magnetoimpedance of Epitaxial Y3Fe5O12 (001) Thin Film in Low-Frequency Regime

Rohit Medwal, Ushnish Chaudhuri, Joseph Vimal Vas, Angshuman Deka, Surbhi Gupta, Martial Duchamp, Hironori Asada, Yasuhiro Fukuma, Ramanathan Mahendiran, Rajdeep Singh Rawat

ACS Applied Materials & Interfaces· Volume 12· Issue 37
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Abstract

The atomically flat interface of the Y3Fe5O12 (YIG) thin film and the Gd3Ga5O12 (GGG) substrate plays a vital role in obtaining the magnetization dynamics of YIG below and above the anisotropy field. Here, magnetoimpedance (MI) is used to investigate the magnetization dynamics in fully epitaxial 45 nm YIG thin films grown on the GGG (001) substrates using a copper strip coil in the MHz–GHz frequency region. The resistance (R) and reactance (X), which are components of impedance (Z), allow us to probe the absorptive and dispersive components of the dynamic permeability, whereas a conventional spectrometer only measures the field derivative of the power absorbed. The distinct excitation modes arising from the resonance in the uniform and dragged magnetization states of YIG are respectively observed above and below the anisotropy field. The magnetodynamics clearly shows the visible dichotomy between two resonant fields below and above the anisotropy field and its motion as a function of the direction of the applied magnetic field. A low value of a damping factor of ∼4.7 – 6.1 × 10–4 is estimated for uniform excitation mode with an anisotropy field of 65 ± 2 Oe. Investigation of below and above anisotropy field-dependent magnetodynamics in the low-frequency mode can be useful in designing the YIG-based resonators, oscillators, filters, and magnonic devices.
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Research context

OpenAlex topics: Magnetic properties of thin films · Magneto-Optical Properties and Applications · Magnetic Properties and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Natural Sciences and Science Education, National Institute of Education, Nanyang Technological University, Singapore 637616, Singapore

Physics Department, National University of Singapore, Singapore 117551, 2 Science Drive 3, Republic of Singapore

Department of Computer Science and Electronics, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka 820-8502, Japan

School of Material Science and Engineering, Facility for Analysis, Characterization, Testing and Simulation (FACTS), Nanyang Technological University, Singapore 637616Singapore

Graduate School of Sciences and Technology for Innovation, Yamaguchi University, Ube 755-8611, Japan

Funding

Ministry of Education - Singapore · Japan Society for the Promotion of Science · Nanyang Technological University

References (31)

Show source-provided references
1. Zhou H. · Phys. Rev. B · 2016 · 94 · 13442110.1103/PhysRevB.94.134421 ↗
2. Bartell J. M. · Phys. Rev. Appl. · 2017 · 7 · 04400410.1103/PhysRevApplied.7.044004 ↗
3. Du C. · J. Appl. Phys. · 2015 · 117 · 17260310.1063/1.4913813 ↗
4. Oh I. · ACS Appl. Mater. Interfaces · 2018 · 10 · 2860810.1021/acsami.8b08749 ↗
5. Zhang D. · J. Alloys Compd. · 2017 · 695 · 230110.1016/j.jallcom.2016.11.089 ↗
6. 10.1109/TMAG.2018.286367810.1109/TMAG.2018.2863678 ↗
7. Liang X. · ACS Appl. Mater. Interfaces · 2016 · 8 · 817510.1021/acsami.5b11173 ↗
8. Shang T. · Sci. Rep. · 2015 · 5 · 1773410.1038/srep17734 ↗
9. Vélez S. · Phys. Rev. B · 2016 · 94 · 17440510.1103/PhysRevB.94.174405 ↗
10. Sokolov N. S. · J. Appl. Phys. · 2016 · 119 · 02390310.1063/1.4939678 ↗
11. Mohmed F. · Ceram. Int. · 2019 · 45 · 241810.1016/j.ceramint.2018.10.161 ↗
12. Lee S. · J. Appl. Phys. · 2016 · 120 · 03390510.1063/1.4956435 ↗
13. Farle M. · Rep. Prog. Phys. · 1998 · 61 · 75510.1088/0034-4885/61/7/001 ↗
14. Zakeri K. · Phys. Rev. B · 2007 · 76 · 10441610.1103/PhysRevB.76.104416 ↗
15. 10.1109/TMAG.2019.290265510.1109/TMAG.2019.2902655 ↗
16. Lotze J. · Physical Review B · 2014 · 90 · 17441910.1103/PhysRevB.90.174419 ↗
17. Chaudhuri U. · IEEE Trans. Magn. · 2018 · 54 · 110.1109/TMAG.2018.2841995 ↗
18. Correa M. A. · J. Magn. Magn. Mater. · 2019 · 480 · 610.1016/j.jmmm.2019.02.051 ↗
19. Santos J. G. S. · Mater. Lett. · 2019 · 256 · 12666210.1016/j.matlet.2019.126662 ↗
20. Schaffer M. · Ultramicroscopy · 2012 · 114 · 6210.1016/j.ultramic.2012.01.005 ↗
21. Medwal R. · Phys. Status Solidi RRL · 2019 · 13 · 190026710.1002/pssr.201900267 ↗
22. Bejlers H. · Phil. Res. Rep. · 1955 · 10 · 113
23. Kumar A. · Appl. Phys. Lett. · 2007 · 91 · 14390210.1063/1.2790370 ↗
24. Gupta S. · Appl. Phys. Lett. · 2017 · 110 · 02240410.1063/1.4973704 ↗
25. Li S. · Sci. Rep. · 2016 · 6 · 3334910.1038/srep33349 ↗
26. Papaioannou E. T. · Appl. Phys. Lett. · 2013 · 103 · 16240110.1063/1.4825167 ↗
27. Zhang Z. · IEEE Magn. Lett. · 2017 · 8 · 370200410.1109/LMAG.2016.2623717 ↗
28. Wang J. · J. Magn. Magn. Mater. · 2012 · 324 · 99110.1016/j.jmmm.2011.10.006 ↗
29. Firby C. J. · Ultrafast Phenom. Nanophotonics XX · 2016 · 9746 · 974612
30. Bhoi B. · J. Appl. Phys. · 2014 · 116 · 24390610.1063/1.4904857 ↗
31. Papa E. · IEEE Trans. Magn. · 2013 · 49 · 105510.1109/TMAG.2012.2229386 ↗