Nanogap-Rich Surface-Enhanced Raman Spectroscopy-Active Substrate Based on Double-Step Deposition and Annealing of the Au Film over the Back Side of Polished Si

Surface-enhanced Raman spectroscopy (SERS) is a highly sensitive and rapid detection technique that is used for detection of various analytes in trace quantities. We present a sensitive, large-area, and nanogap-rich SERS-active substrate by altering a thin gold (Au) film on the unpolished side of a single-side polished silicon wafer by repeated thermal deposition and annealing in an argon environment. The repeated thermal deposition and annealing process was compared on both sides of a one-side-polished silicon wafer; however, the rear side (etched/unpolished side) demonstrated a more enhanced Raman signal owing to the larger effective area. The proposed substrate can be fabricated easily, having a high density of hotspots distributed uniformly all over the substrate. This ensures easy, rapid, and sensitive detection of analytes with a high degree of reproducibility, repeatability, and acceptable uniformity. The optimized substrate shows a high degree of stability with time when exposed to the ambient environment for a longer duration of 148 days. The reported substrate can detect up to 10 –11 M concentrations of 2,4,6-trinitrotoluene (TNT) and 2,4-dinitrotoluene (DNT), with limits of detection (LODs) of 1.22 and 1.26 ng/L, respectively. This work not only presents the efficient and sensitive SERS-active substrate but also shows the advantages of using the rear side of a one-side-polished silicon substrate as a SERS-active chip.