Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt100–xRux/[CoNi]/Ru Multilayer for Spintronic Devices
Source abstract
Abstract
Using a heavy-metal (HM) alloy layer in spin–orbit torque (SOT)-based devices is an effective method for obtaining a high current–spin conversion efficiency θSH. In this work, SOT-based spintronic devices with a Pt100–xRux-alloyed HM layer are studied by applying harmonic Hall measurements and magneto-optical Kerr effect microscopy to detect the θSH and to observe the process of current-induced magnetization switching. Both the highest θSH of 0.132 and the lowest critical current density (Jc) of 8 × 105 A/cm2 are realized in a device with x = 20, which satisfies the high SOT efficiency and low energy consumption simultaneously. The interfacial Dzyaloshinskii–Moriya interaction can be overcome by increasing the in-plane assist field. Meanwhile, the minimum in-plane field required for current-induced complete switching can be reduced to ±60 Oe. Our study reveals that using the Pt–Ru alloyed HM layer is an effective route for SOT application with enhanced performance.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
Funding
Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China
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