journal article·2021-07-28Open access

Irradiation-Driven Restructuring of UO2 Thin Films: Amorphization and Crystallization

Ashabari Majumdar, Khachatur V. Manukyan, Stefania Dede, Jordan M. Roach, Daniel Robertson, Peter C. Burns, Ani Aprahamian

ACS Applied Materials & Interfaces· Volume 13· Issue 29

Abstract

Combustion synthesis in uranyl nitrate–acetylacetone–2-methoxyethanol solutions was used to deposit thin UO 2 films on aluminum substrates to investigate the irradiation-induced restructuring processes. Thermal analysis revealed that the combustion reactions in these solutions are initiated at ∼160 °C. The heat released during the process and the subsequent brief annealing at 400 °C allow the deposition of polycrystalline films with 5–10 nm UO 2 grains. The use of multiple deposition cycles enables tuning of the film thicknesses in the 35–260 nm range. Irradiation with Ar 2+ ions (1.7 MeV energy and a fluence of up to 1 × 10 17 ions/cm 2 ) is utilized to generate a uniform distribution of atomic displacements within the films. X-ray fluorescence (XRF) and alpha-particle emission spectroscopy showed that the films were stable under irradiation and did not undergo sputtering degradation. X-ray photoelectron spectroscopy (XPS) showed that the stoichiometry and uranium ionic concentrations remain stable during irradiation. The high-resolution electron microscopy imaging and electron diffraction analysis demonstrated that at the early stages of irradiation (below 1 × 10 16 ion/cm 2 ) UO 2 films show complete amorphization and beam-induced densification (sintering), resulting in a pore-free disordered film. Prolonged irradiation (5 × 10 16 ion/cm 2 ) is shown to trigger a crystallization process at the surface of the films that moves toward the UO 2 /Al interface, converting the entire amorphous material into a highly crystalline film. This work reports on an entirely different radiation-induced restructuring of the nanoscale UO 2 compared to the coarse-grained counterpart. The preparation of thin UO 2 films deposited on Al substrates fills an area of national need within the stockpile stewardship program of the National Nuclear Security Administration and fundamental research with actinides. The method reported in this work produces pure, robust, and uniform thin-film actinide targets for nuclear science measurements.
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Research context

OpenAlex topics: Magnetic Field Sensors Techniques · Magnetic Properties of Alloys

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Nuclear Science Laboratory, Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, United States

Cyclotron Institute, Texas A&M University, College Station, Texas 77843, United States

Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556, United States

Department of Civil and Environmental Engineering and Earth Sciences, University of Notre Dame, Notre Dame, Indiana 46556, United States

A. Alikhanyan National Science Laboratory of Armenia, 2 Alikhanyan Brothers, 0036 Yerevan, Armenia

Funding

Army Research Office · National Nuclear Security Administration · Division of Physics

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