journal article·2020-05-20

Imparting Boron Nanosheets with Ambient Stability through Methyl Group Functionalization for Mechanistic Investigation of Their Lithiation Process

Qiyuan Zhou, Hongfeng Zhan, Bo Chen, Hai Li, Zhendong Huang, Yanwen Ma, Hua Zhang, Shaozhou Li, Xiao Huang, Wei Huang

ACS Applied Materials & Interfaces· Volume 12· Issue 20
Publisher page

Abstract

Although ultrahigh theoretical capacity has long been predicted for boron-based lithium-ion battery anodes, experimentally, boron has exhibited only limited performance and its lithiation process remains elusive. The two-dimensional (2D) form of boron is believed to be an ideal model system to investigate the lithiation behavior of boron; however, unfortunately, most reported 2D boron structures are prone to oxidation under ambient conditions. In this contribution, through a simultaneous etching and in situ functionalization process, we synthesized for the first time methyl-functionalized boron nanosheets, which remain stable up to 250 °C. Combining experiments and theoretical calculations, we found that lithiation of boron is realized through the formation of alloys such as LiB3 and Li3B14, while alloys with higher Li content such as Li5B are thermodynamically less favored. In addition, detailed electrochemical analysis reveals that side reactions on the boron surface may also contribute to the unsatisfactory performance of boron-based electrodes. Our findings suggest that reducing the enthalpy of formation of high Li content alloys and the choice of a less nucleophilic electrolyte are key to developing high-performance anodes based on novel boron materials. Our demonstration of stable 2D boron structures also paves the way for their fundamental study and practical applications.
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Research context

OpenAlex topics: Advancements in Battery Materials · MXene and MAX Phase Materials · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, P.R. China

Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P.R. China

Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

Department of Chemistry, City University of Hong Kong, Tat Chee Avenue, Hong Kong, China

Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi’an 710072, China

Funding

Ministry of Education of the People's Republic of China · City University of Hong Kong · Priority Academic Program Development of Jiangsu Higher Education Institutions

References (46)

Show source-provided references
1. 10.1038/451652a10.1038/451652a ↗
2. 10.1016/j.rser.2015.12.24910.1016/j.rser.2015.12.249 ↗
3. 10.1021/cr500207g10.1021/cr500207g ↗
4. 10.1038/natrevmats.2016.1310.1038/natrevmats.2016.13 ↗
5. 10.1016/j.jpowsour.2010.07.02010.1016/j.jpowsour.2010.07.020 ↗
6. 10.1361/10549710377208472310.1361/105497103772084723 ↗
7. 10.1021/ja308490a10.1021/ja308490a ↗
8. 10.1021/ja308492g10.1021/ja308492g ↗
9. 10.1021/ja807622w10.1021/ja807622w ↗
10. 10.1007/bf0237358010.1007/bf02373580 ↗
11. 10.1039/c7nr03017g10.1039/c7nr03017g ↗
12. 10.1016/j.electacta.2012.09.01710.1016/j.electacta.2012.09.017 ↗
13. 10.1002/adma.20180140910.1002/adma.201801409 ↗
14. 10.1016/j.nanoen.2016.03.01310.1016/j.nanoen.2016.03.013 ↗
15. 10.1016/j.mtener.2017.08.00610.1016/j.mtener.2017.08.006 ↗
16. 10.1016/j.mtener.2018.02.00310.1016/j.mtener.2018.02.003 ↗
17. 10.1126/science.aad108010.1126/science.aad1080 ↗
18. 10.1038/nchem.249110.1038/nchem.2491 ↗
19. 10.1021/acsnano.8b0933910.1021/acsnano.8b09339 ↗
20. 10.1038/s41565-018-0317-610.1038/s41565-018-0317-6 ↗
21. 10.1021/jacs.7b0615310.1021/jacs.7b06153 ↗
22. 10.1524/zkri.220.5.567.6507510.1524/zkri.220.5.567.65075 ↗
23. Moulder J. F. S. · 1992
24. 10.1016/j.carbon.2012.11.03110.1016/j.carbon.2012.11.031 ↗
25. 10.1038/ncomms438910.1038/ncomms4389 ↗
26. 10.1038/s41565-018-0157-410.1038/s41565-018-0157-4 ↗
27. 10.1103/physrevlett.99.11550110.1103/physrevlett.99.115501 ↗
28. 10.1021/nl300475410.1021/nl3004754 ↗
29. 10.1016/s1003-6326(06)60022-810.1016/s1003-6326(06)60022-8 ↗
30. 10.1002/adma.20160016410.1002/adma.201600164 ↗
31. 10.1021/acsami.8b1772910.1021/acsami.8b17729 ↗
32. 10.1016/j.electacta.2019.13462510.1016/j.electacta.2019.134625 ↗
33. 10.1021/jp074464w10.1021/jp074464w ↗
34. 10.1021/jp970490q10.1021/jp970490q ↗
35. 10.1149/1.212922210.1149/1.2129222 ↗
36. 10.1002/ente.20160013210.1002/ente.201600132 ↗
37. 10.1002/adfm.20180744110.1002/adfm.201807441 ↗
38. 10.1149/1.183823110.1149/1.1838231 ↗
39. 10.1149/2.021306jes10.1149/2.021306jes ↗
40. 10.1149/1.271432310.1149/1.2714323 ↗
41. Newman J. · 2004
42. 10.1002/anie.20090324610.1002/anie.200903246 ↗
43. 10.1016/j.electacta.2010.05.07210.1016/j.electacta.2010.05.072 ↗
44. 10.1016/j.jcis.2012.01.04910.1016/j.jcis.2012.01.049 ↗
45. 10.1016/0013-4686(90)87055-710.1016/0013-4686(90)87055-7 ↗
46. 10.1016/0013-4686(90)87056-810.1016/0013-4686(90)87056-8 ↗