journal article·2017-10-18

Wetting Regimes for Residual-Layer-Free Transfer Molding at Micro- and Nanoscales

Michael E. Deagen, Linda S. Schadler, Chaitanya K. Ullal

Publisher page

Abstract

Transfer molding offers a low-cost approach to large-area fabrication of isolated structures in a variety of materials when recessed features of the open-faced mold are filled without leaving a residual layer on the plateaus of the mold. Considering both macroscale dewetting and microscale capillary flow, a proposed map of wetting regimes for blade meniscus coating provides a guide for achieving discontinuous dewetting at maximum throughput. Dependence of meniscus morphology on the azimuthal orientation of the stamp provides insight into the dominant mechanisms for discontinuous dewetting of one-dimensional (1-D) patterns. Critical meniscus velocity is measured and residual-layer-free filling is demonstrated for 1-D patterned soft molds (stamps) with periods ranging from 140 nm to 6 μm. Transfer of isolated lines, and multilayer woodpile structures were achieved through plasma bonding. These results are relevant to other roll-to-roll compatible processes for scalable production of high-resolution structures across large areas.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Fluid Dynamics and Thin Films · Nanofabrication and Lithography Techniques · Nanomaterials and Printing Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Lighting Enabled Systems and Applications, Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, United States

Funding

Division of Graduate Education · Division of Engineering Education and Centers · Empire State Development's Division of Science, Technology and Innovation

References (35)

Show source-provided references
1. 10.1021/acsnano.5b0329910.1021/acsnano.5b03299 ↗
2. 10.1002/adma.1996008101610.1002/adma.19960081016 ↗
3. 10.1002/adma.20070137210.1002/adma.200701372 ↗
4. 10.1002/anie.20090305310.1002/anie.200903053 ↗
5. 10.1002/adma.20150641010.1002/adma.201506410 ↗
6. 10.1021/nl503562310.1021/nl5035623 ↗
7. 10.1063/1.342575610.1063/1.3425756 ↗
8. 10.1116/1.152635510.1116/1.1526355 ↗
9. 10.1063/1.236484510.1063/1.2364845 ↗
10. 10.1021/ja051977c10.1021/ja051977c ↗
11. 10.1021/acsnano.5b0741110.1021/acsnano.5b07411 ↗
12. 10.1021/acs.chemmater.6b0539810.1021/acs.chemmater.6b05398 ↗
13. 10.1021/ac971295a10.1021/ac971295a ↗
14. 10.1021/ja011048v10.1021/ja011048v ↗
15. 10.1038/nnano.2016.17910.1038/nnano.2016.179 ↗
16. 10.1002/adma.20070249510.1002/adma.200702495 ↗
17. 10.1021/la001372o10.1021/la001372o ↗
18. 10.1021/nl049151g10.1021/nl049151g ↗
19. 10.1038/nnano.2010.17510.1038/nnano.2010.175 ↗
20. 10.1038/nnano.2007.26210.1038/nnano.2007.262 ↗
21. 10.1002/adma.20050072110.1002/adma.200500721 ↗
22. 10.1038/282489a010.1038/282489a0 ↗
23. 10.1103/PhysRevLett.66.71510.1103/PhysRevLett.66.715 ↗
24. 10.1103/PhysRevLett.96.17450410.1103/PhysRevLett.96.174504 ↗
25. 10.1017/jfm.2016.6410.1017/jfm.2016.64 ↗
26. 10.1007/s10404-013-1270-110.1007/s10404-013-1270-1 ↗
27. 10.1021/ma982034l10.1021/ma982034l ↗
28. 10.1002/app.1969.07013081510.1002/app.1969.070130815 ↗
29. 10.1103/RevModPhys.57.82710.1103/RevModPhys.57.827 ↗
30. 10.1016/j.ces.2016.10.02610.1016/j.ces.2016.10.026 ↗
31. 10.1021/jp206582610.1021/jp2065826 ↗
32. 10.1007/s10404-013-1145-510.1007/s10404-013-1145-5 ↗
33. 10.1038/300427a010.1038/300427a0 ↗
34. 10.1007/s10404-012-1086-410.1007/s10404-012-1086-4 ↗
35. De Gennes P.-G. · 2013