journal article·2017-03-15

Self-Patterning of Silica/Epoxy Nanocomposite Underfill by Tailored Hydrophilic-Superhydrophobic Surfaces for 3D Integrated Circuit (IC) Stacking

Chia-Chi Tuan, Nathan Pataki James, Ziyin Lin, Yun Chen, Yan Liu, Kyoung-Sik Moon, Zhuo Li, C. P. Wong

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Abstract

As microelectronics are trending toward smaller packages and integrated circuit (IC) stacks nowadays, underfill, the polymer composite filled in between the IC chip and the substrate, becomes increasingly important for interconnection reliability. However, traditional underfills cannot meet the requirements for low-profile and fine pitch in high density IC stacking packages. Post-applied underfills have difficulties in flowing into the small gaps between the chip and the substrate, while pre-applied underfills face filler entrapment at bond pads. In this report, we present a self-patterning underfilling technology that uses selective wetting of underfill on Cu bond pads and Si 3 N 4 passivation via surface energy engineering. This novel process, fully compatible with the conventional underfilling process, eliminates the issue of filler entrapment in typical pre-applied underfilling process, enabling high density and fine pitch IC die bonding.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Surface Modification and Superhydrophobicity · 3D IC and TSV technologies · Advanced Sensor and Energy Harvesting Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332, United States

School of Electromechanical Engineering and Key Laboratory of Mechanical Equipment Manufacturing & Control Technology of Ministry of Education, Guangdong University of Technology, Guangzhou 510006, China

Department of Materials Science, Fudan University, 220 Handan Road, Shanghai 200433, China

Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong

Funding

Semiconductor Research Corporation

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