Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films
Source abstract
Abstract
Corundum-structured α-phase Ga 1.4 Sn 0.6 O 3 thin films have been deposited on m -plane Al 2 O 3 (300) substrates using laser molecular beam epitaxy technology. With increasing of the oxygen partial pressure, the crystal lattice of Ga 1.4 Sn 0.6 O 3 films expands due to tin ions valence changes from Sn 4+ to Sn 2+ . The resistivity of the film deposited under 3 × 10 –5 Pa is 3.54 × 10 4 Ω·cm, which decreases by about 2 orders of magnitude than that fabricated under 3 × 10 –1 Pa. The mixture valence of Sn 2+ and Sn 4+ ions leads to the impurity altitude compensation effect. The deep ultraviolet photodetector based on α-phase Ga 1.4 Sn 0.6 O 3 thin films was fabricated. With the oxygen partial pressure reducing gradually, the dark current and the photocurrent increase, and the relaxation time constants diminish, respectively.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Department of Physics, The State University of New York at Potsdam, Potsdam, New York 13676-2294, United States
Funding
Natural Science Foundation of Beijing Municipality · China Postdoctoral Science Foundation · National Natural Science Foundation of China
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