Enhanced Thermoelectric Properties of Boron-Substituted Single-Walled Carbon Nanotube Films
Source abstract
Abstract
Atomic doping is the most fundamental approach to modulating the transport properties of carbon nanotubes. In this paper, we demonstrate the enhanced thermoelectric properties of boron-substituted single-walled carbon nanotube (B-SWCNT) films. The developed two-step synthesis of large quantities of B-SWCNTs readily enables the measurements of thermoelectricity of bulk B-SWCNT films. Complementary structural characterization implies the unique configuration of boron atoms at the doping sites of SWCNTs, successfully enabling carrier doping to SWCNTs. The developed boron substitution, in combination with chemical doping, is found to substantially improve the thermoelectric properties.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Carbon Nanotubes in Composites
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
Division of Materials Science, Nara Institute of Science and Technology, Ikoma 630-0192, Japan
Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 30013, Taiwan
JST, PRESTO, Kawaguchi 332-0012, Japan
Funding
Precursory Research for Embryonic Science and Technology · Japan Society for the Promotion of Science · Ministry of Science and Technology, Taiwan
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