Distinguishing the Effects of the Space-Charge Layer and Interfacial Side Reactions on Li10GeP2S12-Based All-Solid-State Batteries with Stoichiometric-Controlled LiCoO2
Source abstract
Abstract
All-solid-state lithium batteries (ASSLBs) with high volumetric energy density and enhanced safety are considered one of the most promising next-generation batteries. Elucidating the capacity-fading mechanism caused by the space-charge layer (SCL) and the interfacial side reaction (ISR) is crucial for the future development of high-energy-density ASSLBs with a longer cycle life. Here, a systematic study to probe the electrochemical performance of Li10GeP2S12-based ASSLBs with stoichiometric-controlled LixCoO2 was performed with the aid of density functional theory (DFT) calculations, X-ray photoelectron spectroscopy (XPS), focused ion beam-field emission scanning electron microscopy (FIB-SEM), and solid-state nuclear magnetic resonance (NMR) spectroscopy. We discovered that the overstoichiometric Li1.042CoO2 shows a high capacity at first cycle with the smallest overpotential, but the capacity gradually decreases, which is ascribed to the weak SCL effect and strong interfacial side reactions. On the contrary, the lithium-deficient Li0.945CoO2 achieves the best cycling stability with a very low capacity associated with the strongest SCL effect and weak interfacial side reactions. The SCL effect is indeed coupled with ISR, which eventually leads to capacity fading in long-term operation. We believe that the new insights gained from this work will accelerate the future development of LiCoO2/LGPS-based ASSLBs with both a mitigated SCL effect and a longer cycle life.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advancements in Battery Materials · Advanced Battery Materials and Technologies · Advanced Battery Technologies Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Shanghai Key Laboratory of Magnetic Resonance, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, P. R. China
Funding
East China Normal University · Ministry of Education of the People's Republic of China · National Natural Science Foundation of China · Shanghai Key Laboratory of Magnetic Resonance · Shanghai Science and technology innovation action plan
References (35)
Show source-provided references
1. 10.1002/aenm.20210195610.1002/aenm.202101956 ↗
2. 10.1002/aenm.20150221410.1002/aenm.201502214 ↗
3. 10.1021/acsenergylett.0c0231410.1021/acsenergylett.0c02314 ↗
4. 10.1002/adma.20190202910.1002/adma.201902029 ↗
5. 10.1002/anie.20190980510.1002/anie.201909805 ↗
6. 10.1038/s41560-021-00952-010.1038/s41560-021-00952-0 ↗
7. 10.1039/C9EE01548E10.1039/C9EE01548E ↗
8. 10.1038/nmat306610.1038/nmat3066 ↗
9. 10.1016/j.ensm.2020.12.00310.1016/j.ensm.2020.12.003 ↗
10. 10.1038/s41467-021-26895-410.1038/s41467-021-26895-4 ↗
11. 10.1039/D0EE03212C10.1039/D0EE03212C ↗
12. 10.1016/j.nanoen.2019.10425210.1016/j.nanoen.2019.104252 ↗
13. 10.1038/s41467-020-19726-510.1038/s41467-020-19726-5 ↗
14. 10.1016/j.ssi.2012.01.00910.1016/j.ssi.2012.01.009 ↗
15. 10.1002/adma.20050260410.1002/adma.200502604 ↗
16. 10.1016/j.elecom.2007.02.00810.1016/j.elecom.2007.02.008 ↗
17. 10.1016/j.jpowsour.2020.22837210.1016/j.jpowsour.2020.228372 ↗
18. 10.1002/aenm.20210152110.1002/aenm.202101521 ↗
19. 10.1149/1945-7111/ac0f5c10.1149/1945-7111/ac0f5c ↗
20. 10.1016/j.ensm.2018.10.00310.1016/j.ensm.2018.10.003 ↗
21. 10.1038/s41467-021-26190-210.1038/s41467-021-26190-2 ↗
22. 10.1039/c3ee41728j10.1039/c3ee41728j ↗
23. 10.1021/jp503990910.1021/jp5039909 ↗
24. 10.1021/cm021279g10.1021/cm021279g ↗
25. 10.1039/a900016j10.1039/a900016j ↗
26. 10.1016/j.jpowsour.2019.22695410.1016/j.jpowsour.2019.226954 ↗
27. 10.1016/j.electacta.2013.06.12010.1016/j.electacta.2013.06.120 ↗
28. 10.1039/C9CC03304A10.1039/C9CC03304A ↗
29. 10.1016/j.jechem.2020.06.02710.1016/j.jechem.2020.06.027 ↗
30. 10.1021/acs.chemmater.6b0061010.1021/acs.chemmater.6b00610 ↗
31. 10.1002/smtd.20190026110.1002/smtd.201900261 ↗
32. 10.1039/C4TA04496G10.1039/C4TA04496G ↗
33. 10.1016/j.jnoncrysol.2013.12.02010.1016/j.jnoncrysol.2013.12.020 ↗
34. 10.1021/cm501695910.1021/cm5016959 ↗
35. 10.1103/PhysRevB.44.94310.1103/PhysRevB.44.943 ↗