journal article·2022-02-02

Enhanced Thermoelectric Properties of Cu2SnSe3-Based Materials with Ag2Se Addition

Xin Cheng, Bo Zhu, Dongwang Yang, Xianli Su, Wei Liu, Hongyao Xie, Yun Zheng, Xinfeng Tang

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Abstract

In this work, (Ag, In)-co-doped Cu2SnSe3-based compounds are prepared using a self-propagating high-temperature synthesis process. Ag2Se and as-synthesized (Ag, In)-co-doped Cu2SnSe3-based powders are mixed in a proportion according to the formula of Cu1.85Ag0.15Sn0.91In0.09Se3/x Ag2Se (x = 0, 3, 4, and 5%), which is followed by a subsequent plasma-activated sintering (PAS) to obtain consolidated composite bulks. A sandwich experiment is designed to reveal the evolution of the microstructure and phase composition of the composite samples during the PAS process. We investigate the reaction mechanism between Ag2Se and Cu2SnSe3-based matrix as well as the influence of Ag2Se on the phase composition, microstructure, and thermoelectric transport properties of the composites. Ag2Se addition is proven to be effective to improve Ag solubility in the Cu1.85Ag0.15Sn0.91In0.09Se3 matrix and introduce a CuSe secondary phase and an Ag-rich phase at grain boundaries. The electrical conductivity of Cu1.85Ag0.15Sn0.91In0.09Se3/x Ag2Se (x = 0, 3, 4, and 5%) composites decreases while the Seebeck coefficient increases with increasing Ag2Se addition, resulting in an optimized power factor. Moreover, benefiting from the collective phonon scattering at various defects induced by Ag2Se addition, the composite samples exhibit significantly suppressed lattice thermal conductivity, which reaches as low as 0.11 W m–1 K–1 at 700 K for the x = 5% sample. A peak figure-of-merit (ZT) of 1.26 at 750 K and an average ZT of 0.75 at 300–800 K are obtained for Cu1.85Ag0.15Sn0.91In0.09Se3/5% Ag2Se. This work provides an efficient way to improve average ZT values of Cu2SnSe3-based compounds for promising power generation at intermediate temperatures.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China

Key Laboratory of Textile Fiber and Product, Ministry of Education, Wuhan Textile University, Wuhan 430200, China

Hubei Zhongyi Technology Co. Limited, 47 Mengze Road, Yunmeng County, Xiaogan 432599, Hubei, China

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

Funding

Opening Project of Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Jianghan University · Hubei Provincial Natural Science Foundation of China · National Key Research and Development Program of China

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