Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZrxNiSn Synthesized by a Modified Solid-State Reaction
Abstract
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Heusler alloys: electronic and magnetic properties · Chalcogenide Semiconductor Thin Films
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Affiliations
School of Chemistry and Chemical Engineering & School of Physical Science and Technology, Guangxi University, Nanning 530004, China
School of Physics and Electronic & Electrical Engineering, and Jiangsu Key Laboratory of Modern Measurement Technology and Intelligent Systems, Huaiyin Normal University, Huai’an 223300, China
Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, Guilin University of Electronic Technology, Guilin 541004, China
Department of Materials Science and Engineering, SIT Research Laboratories, Innovative Global Program, Faculty of Engineering, Shibaura Institute of Technology, Tokyo 135-8548, Japan
School of Physical Science and Technology, Guangxi University, Nanning 530004, China
International Research Center for Nuclear Materials Science, Institute for Material Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan
School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China
School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China
Funding
Ministry of Science and Technology of the People's Republic of China · Natural Science Foundation of Guangxi Province · Japan Society for the Promotion of Science · National Natural Science Foundation of China