journal article·2021-06-23

Solvent Vapor Annealing, Defect Analysis, and Optimization of Self-Assembly of Block Copolymers Using Machine Learning Approaches

Gayashani Ginige, Youngdong Song, Brian C. Olsen, Erik J. Luber, Cafer T. Yavuz, Jillian M. Buriak

ACS Applied Materials & Interfaces· Volume 13· Issue 24
Publisher page

Abstract

Self-assembly of block copolymers (BCPs) is an alternative patterning technique that promises high resolution and density multiplication with lower costs. The defectivity of the resulting nanopatterns remains too high for many applications in microelectronics and is exacerbated by small variations of processing parameters, such as film thickness, and fluctuations of solvent vapor pressure and temperature, among others. In this work, a solvent vapor annealing (SVA) flow-controlled system is combined with design of experiments (DOE) and machine learning (ML) approaches. The SVA flow-controlled system enables precise optimization of the conditions of self-assembly of the high Flory-Huggins interaction parameter (χ) hexagonal dot-array forming BCP, poly(styrene-b-dimethylsiloxane) (PS-b-PDMS). The defects within the resulting patterns at various length scales are then characterized and quantified. The results show that the defectivity of the resulting nanopatterned surfaces is highly dependent upon very small variations of the initial film thicknesses of the BCP, as well as the degree of swelling under the SVA conditions. These parameters also significantly contribute to the quality of the resulting pattern with respect to grain coarsening, as well as the formation of different macroscale phases (single and double layers and wetting layers). The results of qualitative and quantitative defect analyses are then compiled into a single figure of merit (FOM) and are mapped across the experimental parameter space using ML approaches, which enable the identification of the narrow region of optimum conditions for SVA for a given BCP. The result of these analyses is a faster and less resource intensive route toward the production of low-defectivity BCP dot arrays via rational determination of the ideal combination of processing factors. The DOE and machine learning-enabled approach is generalizable to the scale-up of self-assembly-based nanopatterning for applications in electronic microfabrication.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Block Copolymer Self-Assembly · Machine Learning in Materials Science · Material Dynamics and Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry, University of Alberta, 11227-Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada

Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

KAUST Catalysis Center (KCC), Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Advanced Membranes and Porous Materials Center (AMPM), Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Funding

Institute for Information and Communications Technology Promotion · Canada Research Chairs · Natural Sciences and Engineering Research Council of Canada · Alberta Innovates - Technology Futures · International Research & Development Program of the National Research Foundation of Korea

References (75)

Show source-provided references
1. 10.1088/2631-7990/aba3ae10.1088/2631-7990/aba3ae ↗
2. 10.1038/s41928-018-0147-410.1038/s41928-018-0147-4 ↗
3. Liu, C.C.; Mignot, Y.; Chi, C.; Farrell, R.; Lai, K.; Guo, J.; Sha, J.; Glodde, M.; Muramatsu, M.; Ido, Y.; Felix, N.; Hetzer, D.; Metz, A.; Corliss, D. In The Integration of 193i and DSA for BEOL Metal Cuts/Blocks Targeting Sub-20 nm Tip-to-Tip CD , Novel Patterning Technologies 201; International Society for Optics and Photonics, 2018; Vol. 10584, 105840L.10.1117/12.2297365 ↗
4. 10.1038/ncomms1236610.1038/ncomms12366 ↗
5. 10.1002/adfm.20160146910.1002/adfm.201601469 ↗
6. 10.1021/acsami.0c0299710.1021/acsami.0c02997 ↗
7. 10.1016/j.progpolymsci.2015.10.00810.1016/j.progpolymsci.2015.10.008 ↗
8. 10.1021/nn505131b10.1021/nn505131b ↗
9. Li, D.; Chien, C.; Wei, X.; Huang, Y.; Qu, X.; Chang, T.; Xiong, S. In Sub-10 nm Silicon FinFET Devices on SOI Substrate Made by Block Copolymer Lithography , 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2018; pp 1–3.10.1109/ICSICT.2018.8564952 ↗
10. Murugesan, M.; Fukushima, T.; Bea, J. C.; Hashimoto, H.; Koyanagi, M. Intra- and Inter-Chip Electrical Interconnection Formed by Directed Self Assembly of Nanocomposite Containing Diblock Copolymer and Nanometal , 2018 IEEE International Reliability Physics Symposium (IRPS), 2018; pp 4D.2-1–4D.2-7.10.1109/IRPS.2018.8353589 ↗
11. 10.1021/acsnano.0c0643310.1021/acsnano.0c06433 ↗
12. 10.1002/adma.20150459010.1002/adma.201504590 ↗
13. 10.1021/acs.chemmater.6b0145310.1021/acs.chemmater.6b01453 ↗
14. 10.1021/acsnano.8b0801310.1021/acsnano.8b08013 ↗
15. 10.1039/C8NR01371C10.1039/C8NR01371C ↗
16. 10.1016/j.memsci.2018.08.03310.1016/j.memsci.2018.08.033 ↗
17. 10.1002/adfm.20170175610.1002/adfm.201701756 ↗
18. 10.1021/acsami.8b1732510.1021/acsami.8b17325 ↗
19. 10.1021/acsami.0c0330010.1021/acsami.0c03300 ↗
20. 10.1016/j.solmat.2018.08.01110.1016/j.solmat.2018.08.011 ↗
21. 10.1021/acs.nanolett.7b0022610.1021/acs.nanolett.7b00226 ↗
22. 10.1021/acsami.8b0645810.1021/acsami.8b06458 ↗
23. 10.1021/acsanm.9b0179410.1021/acsanm.9b01794 ↗
24. 10.1021/mz200245s10.1021/mz200245s ↗
25. 10.1021/acs.macromol.6b0108810.1021/acs.macromol.6b01088 ↗
26. 10.1021/acsnano.8b0420210.1021/acsnano.8b04202 ↗
27. 10.1021/acsami.9b1785810.1021/acsami.9b17858 ↗
28. International Technology Roadmap for Semiconductors, 2011th ed. Semiconductor Industry Association: San Jose, CA, 2011, https://www.semiconductors.org/resources/2011-international-technology-roadmap-for-semiconductors-itrs/.
29. 10.1021/mz500705q10.1021/mz500705q ↗
30. 10.1002/adma.20130256210.1002/adma.201302562 ↗
31. 10.1021/acs.chemmater.6b0296710.1021/acs.chemmater.6b02967 ↗
32. 10.1021/acs.macromol.0c0254310.1021/acs.macromol.0c02543 ↗
33. 10.1021/acsami.5b1056210.1021/acsami.5b10562 ↗
34. 10.1016/j.polymer.2015.07.05310.1016/j.polymer.2015.07.053 ↗
35. 10.1021/nn500909810.1021/nn5009098 ↗
36. 10.1021/am302830w10.1021/am302830w ↗
37. 10.1021/acsami.6b0076510.1021/acsami.6b00765 ↗
38. 10.1021/nn507182710.1021/nn5071827 ↗
39. 10.1021/acsnano.0c0069610.1021/acsnano.0c00696 ↗
40. 10.1021/acs.macromol.8b0053910.1021/acs.macromol.8b00539 ↗
41. 10.1021/acsmacrolett.5b0012610.1021/acsmacrolett.5b00126 ↗
42. 10.1021/acs.chemmater.0c0325110.1021/acs.chemmater.0c03251 ↗
43. 10.1038/nnano.2017.4910.1038/nnano.2017.49 ↗
44. 10.1038/nnano.2017.3410.1038/nnano.2017.34 ↗
45. 10.1021/acsami.9b1281710.1021/acsami.9b12817 ↗
46. 10.3390/polym1304055310.3390/polym13040553 ↗
47. 10.1021/ma800733810.1021/ma8007338 ↗
48. 10.1103/PhysRevLett.87.01550310.1103/PhysRevLett.87.015503 ↗
49. 10.1002/adfm.20090012110.1002/adfm.200900121 ↗
50. 10.1039/C7SM00212B10.1039/C7SM00212B ↗
51. 10.1021/acsami.8b0661110.1021/acsami.8b06611 ↗
52. 10.1021/acsami.8b0524710.1021/acsami.8b05247 ↗
53. 10.1103/PhysRevLett.89.03550110.1103/PhysRevLett.89.035501 ↗
54. 10.1021/acsnano.0c0777710.1021/acsnano.0c07777 ↗
55. 10.1146/annurev-chembioeng-061114-12320910.1146/annurev-chembioeng-061114-123209 ↗
56. 10.1063/1.162732410.1063/1.1627324 ↗
57. 10.1209/epl/i2004-10126-510.1209/epl/i2004-10126-5 ↗
58. 10.1103/PhysRevE.71.06180310.1103/PhysRevE.71.061803 ↗
59. 10.1021/acsnano.8b0472610.1021/acsnano.8b04726 ↗
60. 10.1021/acsami.0c1492210.1021/acsami.0c14922 ↗
61. 10.2478/s11534-011-0096-210.2478/s11534-011-0096-2 ↗
62. 10.1109/TSMC.1979.431007610.1109/TSMC.1979.4310076 ↗
63. Pedregosa F. · J. Mach. Learn. Res. · 2011 · 12 · 2825
64. 10.1021/nl201622410.1021/nl2016224 ↗
65. 10.1021/ma60078a04710.1021/ma60078a047 ↗
66. 10.1002/adma.20080285510.1002/adma.200802855 ↗
67. 10.1063/1.167773510.1063/1.1677735 ↗
68. 10.1088/1361-6528/aa61c910.1088/1361-6528/aa61c9 ↗
69. 10.1021/am503199d10.1021/am503199d ↗
70. 10.1002/cphc.20090075510.1002/cphc.200900755 ↗
71. 10.1116/1.365971410.1116/1.3659714 ↗
72. 10.1103/PhysRevB.28.78410.1103/PhysRevB.28.784 ↗
73. Albrecht T. R. · 2009 · 23710.1007/978-0-387-85600-1_9 ↗
74. 10.1016/0146-664X(80)90054-410.1016/0146-664X(80)90054-4 ↗
75. 10.1021/acs.analchem.7b0050610.1021/acs.analchem.7b00506 ↗