High-Throughput Design of Interfacial Perpendicular Magnetic Anisotropy at Heusler/MgO Heterostructures

The perpendicular magnetic anisotropy (PMA) at ferromagnet/insulator interfaces has important technological applications, such as in the fields of magnetic recording and sensing devices. The perpendicular magnetic tunnel junctions (p-MTJs) with strong PMA have recently attracted increasing interest because they offer high stability and device performance toward low energy consumption. Heusler alloys are a large family of compounds that offer promising magnetic properties for developing p-MTJs. However, it is challenging to select appropriate combinations of Heusler ferromagnets and insulators with the desired interfacial properties. Here, we report a systematic high-throughput screening approach to search for candidate Heusler/MgO material interfaces with strong PMA and other desired material properties for spintronic technologies. On the basis of the open quantum material repositories, we developed a series of material descriptors, including formation energy, convex hull distance, magnetic ordering, lattice misfit, magnetic anisotropy constant, cleavage energy, and tunnel magnetoresistance, to filter candidate Heusler/MgO interfaces among the possible 40 000 ternary Heusler compounds. After a comprehensive screening, five full-Heusler compounds, including Co2CrAl, Co2FeAl, Co2HfSn, Fe2IrGa, and Mn2IrGe, and two half-Heusler compounds, PtCrSb and PtMnAs, were found to be promising for designing p-MTJs. This work demonstrates a new way for the high-throughput design of functional material interfaces for spintronic applications via exploiting the open quantum material repositories and developing effective material descriptors along with the large-scale ab initio calculations for material interfaces.