Lead Sulfide Nanocrystal Quantum Dot Solar Cells with Trenched ZnO Fabricated via Nanoimprinting
Source abstract
Abstract
The improvement of power conversion efficiency, especially current density (Jsc), for nanocrystal quantum dot based heterojunction solar cells was realized by employing a trenched ZnO film fabricated using nanoimprint techniques. For an optimization of ZnO patterns, various patterned ZnO films were investigated using electrical and optical analysis methods by varying the line width, interpattern distance, pattern height, and residual layer. Analyzing the features of patterned ZnO films allowed us to simultaneously optimize both the pronounced electrical effects as well as optical properties. Consequently, we achieved an enhancement in Jsc from 7.82 to 12.5 mA cm(-2) by adopting the patterned ZnO with optimized trenched shape.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Near-Field Optical Microscopy · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon, 305-343, Korea
National Renewable Energy Laboratory, Colorado 80401, United States
Graduate School of Nanoscience and Technology (WCU), KAIST, Daejeon 305-701, Korea
Department of Chemistry, Chungbuk National University, Chungbuk, 361-763, Korea
Department of Materials Science and Engineering, Graduate School of Green Energy Technology, Chungnam National University, Daejeon 305-764 Korea
References (26)
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